2SC4696 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number EN3580A NPN Epitaxial Planar Silicon Darlington Transistor 2SC4696 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers. unit mm 2064A Features [2SC4696] 2.5 1.45 Darlington connection. 6.9 1.0 On-chip Zener diode of 90 10V between collector and base. High DC current gain. High inductive load handling capa

2SC4690 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4690 Power Amplifier Applications Unit mm High breakdown voltage V = 140 V (min) CEO Complementary to 2SA1805 Suitable for use in 70-W high fidelity audio amplifier s output stage Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter v

Ordering number EN3486 NPN Epitaxial Planar Silicon Transistor 2SC4695 Low-Frequency General-Purpose Amplifier, Muting Applications Features Package Dimensions Adoption of FBET process. unit mm High DC current gain. 2018B High VEBO (VEBO 25V). [2SC4695] High reverse hFE (150 typ). Small ON resistance [Ron=1 (IB=5mA)]. 0.4 0.16 3 Very small-sized pac

Ordering number EN3485 NPN Epitaxial Planar Silicon Transistor 2SC4694 Low-Frequency General-Purpose Amplifier, Muting Applications Features Package Dimensions Adoption of MBIT process. unit mm High DC current gain. 2059B High VEBO (VEBO 25V). [2SC4694] High reverse hFE (150 typ). 0.3 Small ON resistance [Ron=1 (IB=5mA)]. 0.15 3 Very small-sized pac

Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit

Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit

2SC4692 Maximum Collector Dissipation Curve 60 40 20 0 50 100 150 Case Temperature TC ( C) Area of Safe Operation 20 (100 V, 20 A) f = 31.5 kHz Ta = 25 C 16 For picture tube arcing 12 8 (800 V, 5 A) 4 0.5 mA 0 400 800 1,200 1,600 2,000 Collector to emitter Voltage VCE (V) Typical Output Characteristics 10 8 6 4 2 TC = 25 C IB = 0 0 2 4 6 8 10 Collector to emi

2SC4693 Silicon NPN Epitaxial Planar Application VHF Wide band amplifier Features High gain bandwidth product fT = 2.5 GHz Typ. Large collector power dissipation PC = 900 mW Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4693 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VC

JMnic Product Specification Silicon NPN Power Transistors 2SC4690 DESCRIPTION With TO-3PFM package Complementary to 2SA1805 Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PFM) and symbol 3 Emitter Absolute maximum ratings(Ta

SMD Type Transistors NPN Transistors 2SC4695 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Colle

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4690 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 7A CE(sat) C Complement to Type 2SA1805 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier a