2SC4696 Datasheet and Replacement

Ordering number:EN3580ANPN Epitaxial Planar Silicon Darlington Transistor2SC4696Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers. unit:mm2064AFeatures [2SC4696]2.51.45 Darlington connection.6.9 1.0 On-chip Zener diode of 90 10V between collectorand base. High DC current gain. High inductive load handling capa

2SC4690 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4690 Power Amplifier Applications Unit: mm High breakdown voltage: V = 140 V (min) CEO Complementary to 2SA1805 Suitable for use in 70-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-emitter v

Ordering number:EN3486NPN Epitaxial Planar Silicon Transistor2SC4695Low-Frequency General-Purpose Amplifier,Muting ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High DC current gain.2018B High VEBO (VEBO 25V).[2SC4695] High reverse hFE (150 typ). Small ON resistance [Ron=1 (IB=5mA)]. 0.40.163 Very small-sized pac

Ordering number:EN3485NPN Epitaxial Planar Silicon Transistor2SC4694Low-Frequency General-Purpose Amplifier,Muting ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High DC current gain.2059B High VEBO (VEBO 25V).[2SC4694] High reverse hFE (150 typ).0.3 Small ON resistance [Ron=1 (IB=5mA)]. 0.153 Very small-sized pac

Transistor2SC4691Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh-speed switching.1Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit

Transistor2SC4691Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh-speed switching.1Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit

2SC4692Maximum Collector Dissipation Curve6040200 50 100 150Case Temperature TC (C)Area of Safe Operation20(100 V, 20 A)f = 31.5 kHz Ta = 25C16For picture tube arcing128(800 V, 5 A)40.5 mA0 400 800 1,200 1,600 2,000Collector to emitter Voltage VCE (V)Typical Output Characteristics108642TC = 25CIB = 00 2 4 6 8 10Collector to emi

2SC4693Silicon NPN Epitaxial PlanarApplicationVHF Wide band amplifierFeatures High gain bandwidth productfT = 2.5 GHz Typ. Large collector power dissipationPC = 900 mWOutlineTO-92MOD1. Emitter2. Collector3. Base3212SC4693Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VC

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4690 DESCRIPTION With TO-3PFM package Complementary to 2SA1805 Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PFM) and symbol 3 EmitterAbsolute maximum ratings(Ta

SMD Type TransistorsNPN Transistors2SC4695SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Colle

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4690DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 7ACE(sat) CComplement to Type 2SA1805100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier a