All Transistors. 2SC4696 Datasheet

 

2SC4696 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC4696
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: NMP

 2SC4696 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC4696 Datasheet (PDF)

 ..1. Size:78K  sanyo
2sc4696.pdf

2SC4696
2SC4696

Ordering number:EN3580ANPN Epitaxial Planar Silicon Darlington Transistor2SC4696Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers. unit:mm2064AFeatures [2SC4696]2.51.45 Darlington connection.6.9 1.0 On-chip Zener diode of 90 10V between collectorand base. High DC current gain. High inductive load handling capa

 8.1. Size:121K  toshiba
2sc4690.pdf

2SC4696
2SC4696

2SC4690 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4690 Power Amplifier Applications Unit: mm High breakdown voltage: V = 140 V (min) CEO Complementary to 2SA1805 Suitable for use in 70-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-emitter v

 8.2. Size:105K  sanyo
2sc4695.pdf

2SC4696
2SC4696

Ordering number:EN3486NPN Epitaxial Planar Silicon Transistor2SC4695Low-Frequency General-Purpose Amplifier,Muting ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High DC current gain.2018B High VEBO (VEBO 25V).[2SC4695] High reverse hFE (150 typ). Small ON resistance [Ron=1 (IB=5mA)]. 0.40.163 Very small-sized pac

 8.3. Size:111K  sanyo
2sc4694.pdf

2SC4696
2SC4696

Ordering number:EN3485NPN Epitaxial Planar Silicon Transistor2SC4694Low-Frequency General-Purpose Amplifier,Muting ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High DC current gain.2059B High VEBO (VEBO 25V).[2SC4694] High reverse hFE (150 typ).0.3 Small ON resistance [Ron=1 (IB=5mA)]. 0.153 Very small-sized pac

 8.4. Size:46K  panasonic
2sc4691 e.pdf

2SC4696
2SC4696

Transistor2SC4691Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh-speed switching.1Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit

 8.5. Size:42K  panasonic
2sc4691.pdf

2SC4696
2SC4696

Transistor2SC4691Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh-speed switching.1Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit

 8.6. Size:44K  hitachi
2sc4692.pdf

2SC4696
2SC4696

2SC4692Maximum Collector Dissipation Curve6040200 50 100 150Case Temperature TC (C)Area of Safe Operation20(100 V, 20 A)f = 31.5 kHz Ta = 25C16For picture tube arcing128(800 V, 5 A)40.5 mA0 400 800 1,200 1,600 2,000Collector to emitter Voltage VCE (V)Typical Output Characteristics108642TC = 25CIB = 00 2 4 6 8 10Collector to emi

 8.7. Size:30K  hitachi
2sc4693.pdf

2SC4696
2SC4696

2SC4693Silicon NPN Epitaxial PlanarApplicationVHF Wide band amplifierFeatures High gain bandwidth productfT = 2.5 GHz Typ. Large collector power dissipationPC = 900 mWOutlineTO-92MOD1. Emitter2. Collector3. Base3212SC4693Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VC

 8.8. Size:198K  jmnic
2sc4690.pdf

2SC4696
2SC4696

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4690 DESCRIPTION With TO-3PFM package Complementary to 2SA1805 Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PFM) and symbol 3 EmitterAbsolute maximum ratings(Ta

 8.9. Size:1179K  kexin
2sc4695.pdf

2SC4696
2SC4696

SMD Type TransistorsNPN Transistors2SC4695SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Colle

 8.10. Size:196K  inchange semiconductor
2sc4690.pdf

2SC4696
2SC4696

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4690DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 7ACE(sat) CComplement to Type 2SA1805100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier a

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , A1941 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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