2SC4755 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4755  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: SC-70

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2SC4755 datasheet

 ..1. Size:46K  panasonic
2sc4755 e.pdf pdf_icon

2SC4755

Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25 C)

 ..2. Size:42K  panasonic
2sc4755.pdf pdf_icon

2SC4755

Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25 C)

 8.1. Size:217K  toshiba
2sc4754.pdf pdf_icon

2SC4755

 8.2. Size:191K  inchange semiconductor
2sc4759.pdf pdf_icon

2SC4755

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4759 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching power s

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