All Transistors. 2SC4755 Datasheet

 

2SC4755 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC4755

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SC-70

2SC4755 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC4755 Datasheet (PDF)

1.1. 2sc4755.pdf Size:42K _panasonic

2SC4755
2SC4755

Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Param

1.2. 2sc4755 e.pdf Size:46K _panasonic

2SC4755
2SC4755

Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Param

 4.1. 2sc4754.pdf Size:217K _toshiba

2SC4755
2SC4755



4.2. 2sc4757.pdf Size:334K _inchange_semiconductor

2SC4755
2SC4755

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4757 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

 4.3. 2sc4759.pdf Size:302K _inchange_semiconductor

2SC4755
2SC4755

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4759 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

4.4. 2sc4758.pdf Size:336K _inchange_semiconductor

2SC4755
2SC4755

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4758 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

Datasheet: D33D22 , D33D23 , D33D24 , D33D25 , D33D26 , D33D27 , D33D28 , D33D29 , 2SC945 , D33D30 , D33D4 , D33D5 , D33D6 , D33J21 , D33J22 , D33J23 , D33J24 .

 
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