2SC4755 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4755
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SC-70
2SC4755 Transistor Equivalent Substitute - Cross-Reference Search
2SC4755 Datasheet (PDF)
1.1. 2sc4755.pdf 
Size:42K _panasonic
Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Param
1.2. 2sc4755 e.pdf Size:46K _panasonic
Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Param
4.1. 2sc4754.pdf Size:217K _toshiba
4.2. 2sc4757.pdf Size:334K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4757 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA
4.3. 2sc4759.pdf Size:302K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4759 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA
4.4. 2sc4758.pdf Size:336K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4758 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA
Datasheet: D33D22 , D33D23 , D33D24 , D33D25 , D33D26 , D33D27 , D33D28 , D33D29 , 2SC945 , D33D30 , D33D4 , D33D5 , D33D6 , D33J21 , D33J22 , D33J23 , D33J24 .
