2SC4807
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC4807
Código: ER
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 15
V
Tensión emisor-base (Veb): 2
V
Corriente del colector DC máxima (Ic): 0.2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3000
MHz
Capacitancia de salida (Cc): 2.8
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
UPAK
Búsqueda de reemplazo de transistor bipolar 2SC4807
2SC4807
Datasheet (PDF)
..1. Size:46K hitachi
2sc4807.pdf 

2SC4807 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 4.4 GHz Typ High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4807 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rati
..2. Size:951K kexin
2sc4807.pdf 

SMD Type Transistors NPN Transistors 2SC4807 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=15V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage VE
..3. Size:185K inchange semiconductor
2sc4807.pdf 

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4807 DESCRIPTION High Gain-Bandwidth Product f = 4.4 GHz TYP. T High Output Power 1 dB Power compression point P = 24 dBm TYP. cp @ V = 5V , I = 100 mA , f = 900 MHz CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF UHF wide
8.1. Size:40K panasonic
2sc4809 e.pdf 

Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob and common base reverse transfer capacitance Crb. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packi
8.2. Size:40K panasonic
2sc4805 e.pdf 

Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.
8.3. Size:36K panasonic
2sc4805.pdf 

Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.
8.4. Size:41K panasonic
2sc4808 e.pdf 

Transistor 2SC4808 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. 3 High transition frequency fT. SSMini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing. 0.2 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Rat
8.5. Size:36K panasonic
2sc4809.pdf 

Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob and common base reverse transfer capacitance Crb. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packi
8.6. Size:37K panasonic
2sc4808.pdf 

Transistor 2SC4808 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. 3 High transition frequency fT. SSMini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing. 0.2 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Rat
8.7. Size:143K jmnic
2sc4804.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta
8.8. Size:191K inchange semiconductor
2sc4806.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4806 DESCRIPTION High Breakdown Voltage- V = 1700V(Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching power su
8.9. Size:114K inchange semiconductor
2sc4804.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute m
Otros transistores... 2SC4737
, 2SC4755
, 2SC4782
, 2SC4783
, 2SC4784
, 2SC4787
, 2SC4791
, 2SC4805
, D209L
, 2SC4808
, 2SC4809
, 2SC4810
, 2SC4811
, 2SC4813
, 2SC4814
, 2SC4815
, 2SC4821
.
History: CHUMB10GP
| NSE180