All Transistors. 2SC4807 Datasheet

 

2SC4807 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC4807

SMD Transistor Code: ER

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3000 MHz

Collector Capacitance (Cc): 2.8 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: UPAK

2SC4807 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC4807 Datasheet (PDF)

1.1. 2sc4807.pdf Size:46K _hitachi

2SC4807
2SC4807

2SC4807 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 4.4 GHz Typ High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4807 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit

1.2. 2sc4807.pdf Size:951K _kexin

2SC4807
2SC4807

SMD Type Transistors NPN Transistors 2SC4807 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=0.2A ● Collector Emitter Voltage VCEO=15V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage VE

 4.1. 2sc4808.pdf Size:37K _panasonic

2SC4807
2SC4807

Transistor 2SC4808 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. 3 High transition frequency fT. SSMini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing. 0.2 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Un

4.2. 2sc4808 e.pdf Size:41K _panasonic

2SC4807
2SC4807

Transistor 2SC4808 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. 3 High transition frequency fT. SSMini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing. 0.2 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Un

 4.3. 2sc4805.pdf Size:36K _panasonic

2SC4807
2SC4807

Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 0.2 0.1

4.4. 2sc4805 e.pdf Size:40K _panasonic

2SC4807
2SC4807

Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 0.2 0.1

 4.5. 2sc4809.pdf Size:36K _panasonic

2SC4807
2SC4807

Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob and common base reverse transfer capacitance Crb. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing.

4.6. 2sc4809 e.pdf Size:40K _panasonic

2SC4807
2SC4807

Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob and common base reverse transfer capacitance Crb. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing.

4.7. 2sc4804.pdf Size:143K _jmnic

2SC4807
2SC4807

JMnic Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION ·With ITO-220 package ·High breakdown voltage APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25

4.8. 2sc4806.pdf Size:262K _inchange_semiconductor

2SC4807
2SC4807

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4806 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

4.9. 2sc4804.pdf Size:114K _inchange_semiconductor

2SC4807
2SC4807

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION Ў¤ With ITO-220 package Ў¤ High breakdown voltage APPLICATIONS Ў¤ Switching regulator and high voltage switching applications Ў¤ High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maxi

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 
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