2SC4956 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETSILICON TRANSISTOR2SC4956HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation Low Feedback CapacitanceCre = 0.20 pF TYP.2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATIONPARTQUANTITY PACKING STYLENUMBER2SC4956-T1 3 Kpcs

DATA SHEETSILICON TRANSISTOR2SC4957HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation Low Feedback CapacitanceCre = 0.3 pF TYP.2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATIONPARTQUANTITY PACKING STYLENUMBER2SC4957-T1 3 Kpcs/

DATA SHEETSILICON TRANSISTOR2SC4954HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation Low Feedback Capacitance2.80.2 +0.1 Cre = 0.3 pF TYP.1.5 0.65 0.15 ORDERING INFORMATION2 PARTQUANTITY PACKING STYLENUMBER3 1 2SC4954-T1 3 Kpc

DATA SHEETSILICON TRANSISTOR2SC4959HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation2.1 0.1 Low Feedback Capacitance1.25 0.1Cre = 0.4 pF TYP.ORDERING INFORMATION2PARTQUANTITY PACKING STYLENUMBER31Embossed tape 8 mm wide.2

DATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDFEATURES Low Noise, High Gain PACKAGE DIMENSIONS Low Voltage Operation in millimeters Low Feedback Capacitance2.80.2 Cre = 0.4 pF TYP.+0.1 1.5 0.65 0.15 ORDERING INFORMATION2 PARTQUANTITY PACKING STYLENUMBER3 1 2SC4955-T1 3 Kpcs/Re

DATA SHEETSILICON TRANSISTOR2SC4958HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation2.1 0.1 Low Feedback Capacitance1.25 0.1Cre = 0.3 pF TYP.ORDERING INFORMATION2PARTQUANTITY PACKING STYLENUMBER31Embossed tape 8 mm wide.2

Power Transistors2SC4953Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features 9.9 0.32.9 0.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEDielectric breakdown voltage of the package: > 5kV1.4

SMD Type TransistorsNPN Transistors2SC4954SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=10mA1 2 Collector Emitter Voltage VCEO=6V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector

SMD Type TransistorsNPN Transistors2SC4955SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=6V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4953DESCRIPTIONSilicon NPN triple diffusion planar typeHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high breakdown voltage highspeed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U