2SC4958 Datasheet. Equivalente

 ..1. Size:46K  nec
 2sc4958.pdf

DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 0.1 Low Feedback Capacitance 1.25 0.1 Cre = 0.3 pF TYP. ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 Embossed tape 8 mm wide. 2

 8.1. Size:743K  1
 2sc490 2sc491 2sc492 2sc493 2sc494 2sc495 2sc496 2sc497 2sc498 2sc499.pdf

 8.2. Size:43K  nec
 2sc4957.pdf

DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation Low Feedback Capacitance Cre = 0.3 pF TYP. 2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATION PART QUANTITY PACKING STYLE NUMBER 2SC4957-T1 3 Kpcs/

 8.3. Size:48K  nec
 2sc4954.pdf

DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation Low Feedback Capacitance 2.8 0.2 +0.1 Cre = 0.3 pF TYP. 1.5 0.65 0.15 ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 2SC4954-T1 3 Kpc

 8.4. Size:53K  nec
 2sc4959.pdf

DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 0.1 Low Feedback Capacitance 1.25 0.1 Cre = 0.4 pF TYP. ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 Embossed tape 8 mm wide. 2

 8.5. Size:48K  nec
 2sc4956.pdf

DATA SHEET SILICON TRANSISTOR 2SC4956 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation Low Feedback Capacitance Cre = 0.20 pF TYP. 2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATION PART QUANTITY PACKING STYLE NUMBER 2SC4956-T1 3 Kpcs

 8.6. Size:44K  nec
 2sc4955.pdf

DATA SHEET SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES Low Noise, High Gain PACKAGE DIMENSIONS Low Voltage Operation in millimeters Low Feedback Capacitance 2.8 0.2 Cre = 0.4 pF TYP. +0.1 1.5 0.65 0.15 ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 2SC4955-T1 3 Kpcs/Re

 8.7. Size:42K  panasonic
 2sc4953.pdf

Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching High collector to base voltage VCBO 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Dielectric breakdown voltage of the package > 5kV 1.4

 8.8. Size:880K  kexin
 2sc4954.pdf

SMD Type Transistors NPN Transistors 2SC4954 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=10mA 1 2 Collector Emitter Voltage VCEO=6V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector

 8.9. Size:591K  kexin
 2sc4955.pdf

SMD Type Transistors NPN Transistors 2SC4955 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=6V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector

 8.10. Size:183K  inchange semiconductor
 2sc4953.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4953 DESCRIPTION Silicon NPN triple diffusion planar type High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high breakdown voltage high speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U