2SC4959 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETSILICON TRANSISTOR2SC4959HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation2.1 0.1 Low Feedback Capacitance1.25 0.1Cre = 0.4 pF TYP.ORDERING INFORMATION2PARTQUANTITY PACKING STYLENUMBER31Embossed tape 8 mm wide.2

DATA SHEETSILICON TRANSISTOR2SC4957HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation Low Feedback CapacitanceCre = 0.3 pF TYP.2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATIONPARTQUANTITY PACKING STYLENUMBER2SC4957-T1 3 Kpcs/

DATA SHEETSILICON TRANSISTOR2SC4954HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation Low Feedback Capacitance2.80.2 +0.1 Cre = 0.3 pF TYP.1.5 0.65 0.15 ORDERING INFORMATION2 PARTQUANTITY PACKING STYLENUMBER3 1 2SC4954-T1 3 Kpc

DATA SHEETSILICON TRANSISTOR2SC4956HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation Low Feedback CapacitanceCre = 0.20 pF TYP.2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATIONPARTQUANTITY PACKING STYLENUMBER2SC4956-T1 3 Kpcs

DATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDFEATURES Low Noise, High Gain PACKAGE DIMENSIONS Low Voltage Operation in millimeters Low Feedback Capacitance2.80.2 Cre = 0.4 pF TYP.+0.1 1.5 0.65 0.15 ORDERING INFORMATION2 PARTQUANTITY PACKING STYLENUMBER3 1 2SC4955-T1 3 Kpcs/Re

DATA SHEETSILICON TRANSISTOR2SC4958HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation2.1 0.1 Low Feedback Capacitance1.25 0.1Cre = 0.3 pF TYP.ORDERING INFORMATION2PARTQUANTITY PACKING STYLENUMBER31Embossed tape 8 mm wide.2

Power Transistors2SC4953Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features 9.9 0.32.9 0.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEDielectric breakdown voltage of the package: > 5kV1.4

SMD Type TransistorsNPN Transistors2SC4954SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=10mA1 2 Collector Emitter Voltage VCEO=6V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector

SMD Type TransistorsNPN Transistors2SC4955SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=6V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4953DESCRIPTIONSilicon NPN triple diffusion planar typeHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high breakdown voltage highspeed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U