2SC5007 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NEC's NPN SILICON HIGH NE681FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE:1.2 dB at 1 GHz1.6 dB at 2 GHz HIGH ASSOCIATED GAIN:15 dB at 1 GHz12 dB at 2 GHz LOW COST00 (CHIP) 35 (MICRO-X)DESCRIPTIONNEC's NE681 series of NPN epitaxial silicon transistors aredesigned for low noise, high gain, low cost amplifier a

DATA SHEETSILICON TRANSISTOR2SC5007NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONThe 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic rangeand excellent linearity. This is achieved by direc

NEC's NPN SILICON HIGH NE856FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT:fT = 7 GHz LOW NOISE FIGURE:1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION35 (MICRO-X)00 (CHIP) LOW COSTDESCRIPTIONNEC's NE856 series of NPN epitaxial silicon transistors isdesigned for low cost amplifier and oscillator application

DATA SHEETSILICON TRANSISTOR2SC5008NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for usein millimetersin low noise and small signal amplifiers from VHF band to L band. Low1.6 0.1noise figure, high gain, and high current capability achieve a very wide0.8 0.1dyna

DATA SHEETSILICON TRANSISTOR2SC5004NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC5004 is a low supply voltage transistor designed for UHFin millimetersOSC/MIX.It is suitable for a high density surface mount assembly since the1.6 0.10.8 0.1transistor has been applied ultra super mini mold package.2FEATURES

NEC's NPN SILICON HIGH NE680FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE:1.7 dB at 2 GHz2.6 dB at 4 GHz HIGH ASSOCIATED GAIN:12.5 dB at 2 GHz8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE00 (CHIP) 35 (MICRO-X)LOW CURRENT PERFORMANCEDESCRIPTIONNEC's NE680 series of NPN epitaxial silicon transistors isdesigned for l

DATA SHEETSILICON TRANSISTORNE58219 / 2SC5004NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe NE58219 / 2SC5004 is a low supply voltage transistor in millimetersdesigned for UHF OSC/MIX.It is suitable for a high density surface mount assembly since the1.6 0.10.8 0.1transistor has been applied ultra super mini mold packa

DATA SHEETSILICON TRANSISTOR2SC5005NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC5005 is a low supply voltage transistor designed for UHFin millimetersOSC/MIX.It is suitable for a high density surface mount assembly since thetransistor has been applied ultra super mini mold package. 1.6 0.10.8 0.12FEATURES

DATA SHEETSILICON TRANSISTOR2SC5006NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONThe 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic rangeand excellent linearity. This is achieved by direc

DATA SHEETSILICON TRANSISTOR2SC5009NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONThe 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONSin low noise and small signal amplifiers from VHF band to L band. Low in milimetersnoise figure, high gain, and high current capability achieve a very wide1.6 0.1 dynamic range and e

2SC5001 Transistors Low VCE(sat) Transistor (Strobe flash) (20V, 10A) 2SC5001 External dimentions (Unit : mm) Features 1) Low saturation voltage, typically VCE(sat) = 0.13V at IC / CPT36.55.1IB= 4A / 50mA. 2.30.52) High current capacity, typically IC = 10A for DC operation and 15A for 10ms pulse. 3) Complements the 2SA1834. 0.75 Packaging specifications

2SA1834TransistorsTransistors2SC5001(96-106-B217)(96-193-D217)292Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference onl

UNISONIC TECHNOLOGIES CO., LTD 2SC5006 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SC5006 is an NPN epitaxial transistor; it uses UTCs advanced technology to provide the customers with low noise figure, high DC current gain and high current capability achieve a very wide dynamic range and excellent linearity. The UTC 2SC5006 is

JMnic Product Specification Silicon NPN Power Transistors 2SC5003 DESCRIPTION With TO-3PML package High voltage switching transistor Built-in damper diode APPLICATIONS Display horizontal deflection output; switching regulator and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum

JMnic Product Specification Silicon NPN Power Transistors 2SC5002 DESCRIPTION With TO-3PML package High voltage switching APPLICATIONS Display horizontal deflection output; switching regulator general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER COND

Equivalent CcircuitBBuilt-in Damper Diode2SC5003(50)ESilicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Display Horizontal Deflection Output, Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC5003 Symbol Conditions 2SC5003

2SC5002Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SC5002 Symbol Conditions 2SC5002 UnitUnit0.20.2 5.515.6ICBO1 VCB=1200V AVCBO

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5003 DESCRIPTION With TO-3PML package High voltage switching transistor Built-in damper diode APPLICATIONS Display horizontal deflection output; switching regulator and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 Emitter

isc Silicon NPN RF Transistor 2SC5006DESCRIPTIONLow Voltage UseUltra Super Mini Mold PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise and small signal amplifiersfrom VHF band to UHF bandABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBO

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5002DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for display horizontal deflection output,switchingregulator and general purpose applicati