2SC5009 Datasheet. Equivalente

 ..1. Size:59K  nec
 2sc5009.pdf

DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal amplifiers from VHF band to L band. Low in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6 0.1 dynamic range and e

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 2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf

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 2sc5000.pdf

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 ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf

NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application

 8.4. Size:51K  nec
 2sc5008.pdf

DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low 1.6 0.1 noise figure, high gain, and high current capability achieve a very wide 0.8 0.1 dyna

 8.5. Size:47K  nec
 2sc5004.pdf

DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5004 is a low supply voltage transistor designed for UHF in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the 1.6 0.1 0.8 0.1 transistor has been applied ultra super mini mold package. 2 FEATURES

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 ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 10 GHz LOW NOISE FIGURE 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l

 8.7. Size:1827K  nec
 ne58219 2sc5004.pdf

DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the 1.6 0.1 0.8 0.1 transistor has been applied ultra super mini mold packa

 8.8. Size:47K  nec
 2sc5005.pdf

DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5005 is a low supply voltage transistor designed for UHF in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. 1.6 0.1 0.8 0.1 2 FEATURES

 8.9. Size:52K  nec
 2sc5006.pdf

DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direc

 8.10. Size:218K  nec
 2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf

NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 8 GHz LOW NOISE FIGURE 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier a

 8.11. Size:53K  nec
 2sc5007.pdf

DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direc

 8.12. Size:66K  rohm
 2sc5001.pdf

2SC5001 Transistors Low VCE(sat) Transistor (Strobe flash) (20V, 10A) 2SC5001 External dimentions (Unit mm) Features 1) Low saturation voltage, typically VCE(sat) = 0.13V at IC / CPT3 6.5 5.1 IB= 4A / 50mA. 2.3 0.5 2) High current capacity, typically IC = 10A for DC operation and 15A for 10ms pulse. 3) Complements the 2SA1834. 0.75 Packaging specifications

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 2sa1834 2sc5001.pdf

2SA1834 Transistors Transistors 2SC5001 (96-106-B217) (96-193-D217) 292 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference onl

 8.14. Size:134K  utc
 2sc5006.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SC5006 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SC5006 is an NPN epitaxial transistor; it uses UTC s advanced technology to provide the customers with low noise figure, high DC current gain and high current capability achieve a very wide dynamic range and excellent linearity. The UTC 2SC5006 is

 8.15. Size:228K  jmnic
 2sc5003.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC5003 DESCRIPTION With TO-3PML package High voltage switching transistor Built-in damper diode APPLICATIONS Display horizontal deflection output; switching regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum

 8.16. Size:235K  jmnic
 2sc5002.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC5002 DESCRIPTION With TO-3PML package High voltage switching APPLICATIONS Display horizontal deflection output; switching regulator general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER COND

 8.17. Size:25K  sanken-ele
 2sc5003.pdf

Equivalent C circuit B Built-in Damper Diode 2SC5003 (50 ) E Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Display Horizontal Deflection Output, Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC5003 Symbol Conditions 2SC5003

 8.18. Size:24K  sanken-ele
 2sc5002.pdf

2SC5002 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Display Horizontal Deflection Output, Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) Symbol 2SC5002 Symbol Conditions 2SC5002 Unit Unit 0.2 0.2 5.5 15.6 ICBO1 VCB=1200V A VCBO

 8.19. Size:177K  inchange semiconductor
 2sc5003.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5003 DESCRIPTION With TO-3PML package High voltage switching transistor Built-in damper diode APPLICATIONS Display horizontal deflection output; switching regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter

 8.20. Size:203K  inchange semiconductor
 2sc5006.pdf

isc Silicon NPN RF Transistor 2SC5006 DESCRIPTION Low Voltage Use Ultra Super Mini Mold Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V CBO

 8.21. Size:181K  inchange semiconductor
 2sc5002.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5002 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for display horizontal deflection output,switching regulator and general purpose applicati