2SC5012 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETSILICON TRANSISTOR2SC5012HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS SUPER MINI MOLDFEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 9 GHz TYP.) in millimeters Low Noise, High Gain2.1 0.2 Low Voltage Operation1.25 0.1 0.3 +0.1 0.05 (LEADS 2, 3, 4) ORDERING INFORMATION2 3 P

NEC's NPN SILICON HIGH NE681FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE:1.2 dB at 1 GHz1.6 dB at 2 GHz HIGH ASSOCIATED GAIN:15 dB at 1 GHz12 dB at 2 GHz LOW COST00 (CHIP) 35 (MICRO-X)DESCRIPTIONNEC's NE681 series of NPN epitaxial silicon transistors aredesigned for low noise, high gain, low cost amplifier a

NEC's NPN SILICON HIGH NE856FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT:fT = 7 GHz LOW NOISE FIGURE:1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION35 (MICRO-X)00 (CHIP) LOW COSTDESCRIPTIONNEC's NE856 series of NPN epitaxial silicon transistors isdesigned for low cost amplifier and oscillator application

DATA SHEETSILICON TRANSISTOR2SC5013HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS SUPER MINI MOLDFEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 10 GHz TYP.) in millimeters Low Noise, High Gain2.1 0.2 Low Voltage Operation 1.25 0.1 0.3 +0.1 0.05 (LEADS 2, 3, 4) ORDERING INFORMATION2 3 P

NEC's NPN SILICON HIGH NE680FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE:1.7 dB at 2 GHz2.6 dB at 4 GHz HIGH ASSOCIATED GAIN:12.5 dB at 2 GHz8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE00 (CHIP) 35 (MICRO-X)LOW CURRENT PERFORMANCEDESCRIPTIONNEC's NE680 series of NPN epitaxial silicon transistors isdesigned for l

DATA SHEETSILICON TRANSISTOR2SC5014HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS SUPER MINI MOLDFEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 12 GHz TYP.) in millimeters Low Noise, High Gain2.1 0.2 Low Voltage Operation1.25 0.1 ORDERING INFORMATIONPARTQUANTITY PACKING STYLENUMBER2SC5014

DATA SHEETSILICON TRANSISTOR2SC5010NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDESCRIPTIONThe 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range andexcellent linearity. This is achieved by direct

DATA SHEETSILICON TRANSISTOR2SC5011HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS SUPER MINI MOLDFEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product in millimeters(fT = 6.5 GHz TYP.)2.1 0.2 Low Noise, High Gain 1.25 0.1 0.3 +0.1 0.05 Low Voltage Operation(LEADS 2, 3, 4) 2 3 ORDERING INFORMATION

DATA SHEETNPN SILICON RF TRANSISTOR2SC5015NPN EPITAXIAL SILICON RF TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION4-PIN SUPER MINIMOLD (18)FEATURES High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Low noise and high gain Low voltage operation 4-pin super minimold (18) packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5015 50

Transistor2SC5019Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow noise figure NF.High gain.45High transition frequency fT.Mini Power type package, allowing downsizing of the equipment0.4 0.08and automatic insertion through the tape packing and the maga- 0.4 0.040.5 0.08zine packing. 1.5

Transistor2SC5019Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow noise figure NF.High gain.45High transition frequency fT.Mini Power type package, allowing downsizing of the equipment0.4 0.08and automatic insertion through the tape packing and the maga- 0.4 0.040.5 0.08zine packing. 1.5

Transistor2SC5018Silicon NPN triple diffusion planer typeFor high breakdown voltage high-speed switchingUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to base voltage VCBO.High emitter to base voltage VEBO.0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symbol Ratings Unit1 2 3Collect

Transistor2SC5018Silicon NPN triple diffusion planer typeFor high breakdown voltage high-speed switchingUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to base voltage VCBO.High emitter to base voltage VEBO.0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symbol Ratings Unit1 2 3Collect

SMD Type TransistorsNPN Transistors2SC5019SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=80mA Collector Emitter Voltage VCEO=10V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VE