2SC5018 Datasheet. Equivalente

 ..1. Size:41K  panasonic
 2sc5018 e.pdf

Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Unit 1 2 3 Collect

 ..2. Size:36K  panasonic
 2sc5018.pdf

Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Unit 1 2 3 Collect

 8.1. Size:743K  1
 2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf

 8.2. Size:257K  nec
 ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf

NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application

 8.3. Size:44K  nec
 2sc5013.pdf

DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 10 GHz TYP.) in millimeters Low Noise, High Gain 2.1 0.2 Low Voltage Operation 1.25 0.1 0.3 +0.1 0.05 (LEADS 2, 3, 4) ORDERING INFORMATION 2 3 P

 8.4. Size:247K  nec
 ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 10 GHz LOW NOISE FIGURE 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l

 8.5. Size:49K  nec
 2sc5014.pdf

DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 12 GHz TYP.) in millimeters Low Noise, High Gain 2.1 0.2 Low Voltage Operation 1.25 0.1 ORDERING INFORMATION PART QUANTITY PACKING STYLE NUMBER 2SC5014

 8.6. Size:52K  nec
 2sc5010.pdf

DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct

 8.7. Size:43K  nec
 2sc5012.pdf

DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 9 GHz TYP.) in millimeters Low Noise, High Gain 2.1 0.2 Low Voltage Operation 1.25 0.1 0.3 +0.1 0.05 (LEADS 2, 3, 4) ORDERING INFORMATION 2 3 P

 8.8. Size:52K  nec
 2sc5011.pdf

DATA SHEET SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product in millimeters (fT = 6.5 GHz TYP.) 2.1 0.2 Low Noise, High Gain 1.25 0.1 0.3 +0.1 0.05 Low Voltage Operation (LEADS 2, 3, 4) 2 3 ORDERING INFORMATION

 8.9. Size:218K  nec
 2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf

NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 8 GHz LOW NOISE FIGURE 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier a

 8.10. Size:49K  nec
 2sc5015.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18) FEATURES High fT fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Low noise and high gain Low voltage operation 4-pin super minimold (18) package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5015 50

 8.11. Size:41K  panasonic
 2sc5019 e.pdf

Transistor 2SC5019 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low noise figure NF. High gain. 45 High transition frequency fT. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and automatic insertion through the tape packing and the maga- 0.4 0.04 0.5 0.08 zine packing. 1.5

 8.12. Size:38K  panasonic
 2sc5019.pdf

Transistor 2SC5019 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low noise figure NF. High gain. 45 High transition frequency fT. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and automatic insertion through the tape packing and the maga- 0.4 0.04 0.5 0.08 zine packing. 1.5

 8.13. Size:891K  kexin
 2sc5019.pdf

SMD Type Transistors NPN Transistors 2SC5019 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=80mA Collector Emitter Voltage VCEO=10V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VE