2SC5089 Todos los transistores

2SC5089 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5089 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

SMD Type Transistors NPN Transistors 2SC5089 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=40mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5089 DESCRIPTION High Gain Bandwidth Product f = 10 GHz TYP. T High Gain, Low Noise Figure S 2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz 21e 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF UHF band low noise amplifier applica

2SC5088 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5088 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B

2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B

2SC5085 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B

2SC5087R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087R VHF to UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S21e 2 = 13.5dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V

2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S21e 2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base

2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B

2SC5086FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086FT VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3

2SC5087 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B

2SC5081 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 13.5 GHz Typ High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK 4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC5081 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltag

2SC5080 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 13.5 GHz Typ High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 2. Emitter 4 3. Base 4. Emitter 2SC5080 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage V

SMD Type Transistors NPN Transistors 2SC5084 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=80mA 1 2 Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

SMD Type Transistors NPN Transistors 2SC5086 SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 2 1 Features Collector Current Capability IC=80mA 3 Collector Emitter Voltage VCEO=12V 0.3 0.05 +0.1 0.5 -0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5084 DESCRIPTION High Gain Bandwidth Product f = 7 GHz TYP. T High Gain, Low Noise Figure S 2 = 11 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz 21e 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF UHF band low noise amplifier applicat

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC508 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 18