2SC5104 Todos los transistores

Power Transistors 2SC5104 Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For high breakdown voltage high-speed switching 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High-speed switching High collector to base voltage VCBO 0.8 0.1 0.5max. Wide area of safe operation (ASO) 2.54 0.3 Satisfactory linearity of foward current transfer ratio hFE 5.08 0.5 N

2SC5108FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108FT For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction tempera

2SC5109 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5109 For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 150 mW Junction temperature

2SC5108 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature

2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature

2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 150 mW Junction temperature

2SC5103 Transistors High speed switching transistor (60V, 5A) 2SC5103 External dimensions (Units mm) Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf Typ. 0.1 s at IC = 3A) 5.5 1.5 3) Wide SOA. (safe operating area) 0.9 4) Complements the 2SA1952. C0.5 0.8Min. (1) Base(Gate) 1.5 2.5 (2) Collector(Drain) ROHM CPT3 9.5 (3) Emitt

JMnic Product Specification Silicon NPN Power Transistors 2SC5100 DESCRIPTION With TO-3PML package Complement to type 2SA1908 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

JMnic Product Specification Silicon NPN Power Transistors 2SC5101 DESCRIPTION With TO-3PML package Complement to type 2SA1909 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

2SC5100 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) 2SC5100 Unit Symbol 2SC5100 Unit Symbol Conditions 0.2 0.2 5.5 15.6 0.2 3.45 10max A VCBO 160 V ICBO VCB=160V VCEO 120 V VEB=6V IEBO 10max A

2SC5101 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) Symbol 2SC5101 Unit Symbol Conditions 2SC5101 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 200 V ICBO VCB=200V 10max A VCEO 140 V IEBO VEB=6V 10max A V

SMD Type Transistors NPN Transistors 2SC5109 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

SMD Type Transistors NPN Transistors 2SC5106 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5100 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1908 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5101 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1909 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5103 DESCRIPTION High Collector Current -I = 5A C Low Collector Saturation Voltage Complement to Type 2SA1952 Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in high speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER