2SC5180 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5180
Código: T84
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.03 W
Tensión colector-base (Vcb): 5 V
Tensión colector-emisor (Vce): 3 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 12000 MHz
Capacitancia de salida (Cc): 0.3 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: T84
Búsqueda de reemplazo de transistor bipolar 2SC5180
2SC5180 Datasheet (PDF)
2sc5180.pdf
DATA SHEET SILICON TRANSISTOR2SC5180NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low current consumption and high gain(Units : mm) S21e 2 = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHzS21e 2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz2.1 0.2 Supper Mini-Mold package1.
2sc5184.pdf
DATA SHEETSILICON TRANSISTOR2SC5184NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLDPACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low Noise(Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.1 0.1 Super Mini-Mold package1.25 0.1 EIAJ: SC-70ORDERING INFORMAT
2sc5186.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5186NPN EPITAXIAL SILICON RF TRANSISTORFOR LOW-NOISE MICROWAVE AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES Low noiseNF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHzNF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 3-pin ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5186 50 pcs (N
2sc5183.pdf
DATA SHEETSILICON TRANSISTOR2SC5183NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLDPACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low Noise PACKAGE DIMENSIONS (Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.8+0.2 0.3 4-pin Mini-Mold package1.5+0.2 0.1EIAJ: SC-61ORDERING
2sc5185.pdf
DATA SHEETSILICON TRANSISTOR2SC5185NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low Noise(Units: mm)NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHzNF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.1 0.2 Super Mini-Mold package1.25 0.1ORDERING INFORMATIONPARTQUANTITY ARRA
2sc5181.pdf
DATA SHEETSILICON TRANSISTOR2SC5181NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low current consumption and high gainPACKAGE DIMENSIONS|S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm)|S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz1.6 0.1 Ultra Super Mini-Mold package 0.8
2sc5182.pdf
DATA SHEETSILICON TRANSISTOR2SC5182NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low noise(Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.80.2 Mini-Mold package+0.1 1.5 0.65 0.15 EIAJ: SC-59ORDERING INFORMATIO
2sc5182.pdf
SMD Type TransistorsNPN Transistors2SC5182SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=3V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 5 Collect
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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