2SC5223 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5223
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 500 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SC-63
Búsqueda de reemplazo de transistor bipolar 2SC5223
2SC5223 Datasheet (PDF)
2sc5223.pdf
Power Transistors2SC5223Silicon NPN triple diffusion planar typeUnit: mm6.5 0.12.3 0.15.3 0.14.35 0.1For high-speed switching 0.5 0.11.0 0.1Features0.1 0.050.93 0.10.5 0.1High collector to base voltage VCBO0.75 0.1 2.3 0.1High collector to emitter VCEO4.6 0.11:Base2:Collector3:Emitter1 2 3Absolute Maximum Ratings (Ta=25C)
2sc5228.pdf
Ordering number:EN5035NPN Epitaxial Planar Silicon Transistor2SC5228VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =13.5dB typ (f=1GHz).2110A High cutoff frequency : fT=7GHz typ.[2SC5228]1.90.95 0.950.40.164 30 to 0.1210.60.95 0.851 : Emitter
2sc5229.pdf
Ordering number:EN5045NPN Epitaxial Planar Silicon Transistor2SC5229VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =10.5dB typ (f=1GHz).2038A High cutoff frequency : fT=6.5GHz typ.[2SC5229] Medium power operation : NF=1.7dB typ (f=1GHz).4.521.5(VCE=8V
2sc5227.pdf
Ordering number:EN5034NPN Epitaxial Planar Silicon Transistor2SC5227VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2018B High cutoff frequency : fT=7GHz typ.[2SC5227]0.40.1630 to 0.11 0.95 20.951.92.91 : Base2 : Emitter3 :
2sc5226.pdf
Ordering number:EN5032ANPN Epitaxial Planar Silicon Transistor2SC5226VHF to UHF Wide-Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2059B High cutoff frequency : fT=7GHz typ.[2SC5226]0.30.1530 to 0.11 20.3 0.60.65 0.650.92.01 : Base2 : Emi
2sc5227a.pdf
Ordering number : ENA1063 2SC5227ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5227AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditio
2sc5226a.pdf
Ordering number : ENA1062 2SC5226ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5226AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditio
2sc5227a-4-tb-e 2sc5227a-5-tb-e.pdf
Ordering number : ENA1063A2SC5227ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single CPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-t
2sc5226a-4 2sc5226a-5.pdf
Ordering number : ENA1062A2SC5226ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single MCPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-
2sc5226a.pdf
Ordering number : ENA1062A2SC5226ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single MCPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-
2sc5225.pdf
2SC5225Silicon NPN Epitaxial TransistorADE-208-3931st. EditionApplication Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960.Features High voltage large current operation.VCEO = 80 V, IC = 300 mA High fT.fT = 1.4 GHz Small output capacitance.
2sc5229.pdf
SMD Type TransistorsNPN Transistors2SC5229SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=70mA Collector Emitter Voltage VCEO=10V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VE
2sc5227.pdf
SMD Type TransistorsNPN Transistors2SC5227SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=70mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec
2sc5227.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5227DESCRIPTIONHigh Gain Bandwidth Productf = 7 GHz TYP.THigh Gain, Low Noise FigureS 2 = 12 dB TYP., NF = 1.0 dB TYP @ f = 1 GHz21e100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF~UHF wideband low noise amplifierapp
Otros transistores... BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , A1941 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .
Liste
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