2SC5363 Datasheet. Equivalente

 ..1. Size:40K  panasonic
 2sc5363 e.pdf

Transistor 2SC5363(Tentative) Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Para

 ..2. Size:37K  panasonic
 2sc5363.pdf

Transistor 2SC5363(Tentative) Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Para

 8.1. Size:116K  toshiba
 2sc5360.pdf

 8.2. Size:187K  toshiba
 2sc5368.pdf

 8.3. Size:206K  toshiba
 2sc5361.pdf

 8.4. Size:36K  sanyo
 2sa608n 2sc536n.pdf

Ordering number ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2205 [2SA608N / 2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.5 0.45 0.44 1

 8.5. Size:40K  sanyo
 2sa608 2sc536n.pdf

Ordering number ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2164 [2SA608N/2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.45 0.5 1.27 0.45 0.44 1 2 3 1 Emitter

 8.6. Size:60K  nec
 2sc5369.pdf

PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSION (in mm) High fT 2.1 0.1 14 GHz TYP. 1.25 0.1 High gain S21e 2 = 14 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA 6-pin small mini mold package ABSOLUTE MAXIMUM RATINGS (TA = 25 C)

 8.7. Size:442K  jiangsu
 2sc536n.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC536N TRANSISTOR (NPN) TO 92 FEATURES 1. EMITTER Large Current Capacity and Wide ASO. 2. COLLECTOR APPLICATIONS 3. BASE Capable of Being Used in The Low Frequency to High Frequency Range. Equivalent Circuit C536N=Device code C536N Solid dot=Green molding compound devi

 8.8. Size:111K  jiangsu
 2sc536s.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC536S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base V

 8.9. Size:620K  blue-rocket-elect
 2sc536k.pdf

2SC536(BR3DG536K) 2SC536K(BR3DG536K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Large current capacity and wide ASO / Applications Small signal general purpose amplifier appl

 8.10. Size:1387K  blue-rocket-elect
 2sc536km 2sc536m.pdf

2SC536KM(BR3DG536KM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Large current capacity and wide ASO. / Applications Small signal general purpose amplifier applications