2SC5378 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SC5378Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm2.1 0.1Features 0.425 1.25 0.1 0.425Low noise figure NF.High gain.1High transition frequency fT.3S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maximum Rating

Transistor2SC5378Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm2.1 0.1Features 0.425 1.25 0.1 0.425Low noise figure NF.High gain.1High transition frequency fT.3S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maximum Rating

2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications Unit: mmFor Muting and Switching Applications Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) 1.20.05 @IC = 10 mA/IB = 0.5 mA 0.80.05 High Collector Current: IC = 400 mA (max) 1 2 3Absolute Maximum Ratings (Ta = 25C)

2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High Collector Current: I = 400 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating

2SC5376CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5376CT General Purpose Amplifier Applications Unit: mmSwitching and Muting Switch Applications 0.60.050.50.03 Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA Large collector current: IC = 400 mA (max) Absolute Maximum Ratings (Ta = 25C) 0.35

2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications Low collector saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High collector current: I = 400 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating Un

Ordering number:EN5541ANPN Epitaxial Planar Silicon Transistor2SC5375VHF to UHF Band OSC,High-Frequency Amplifiers ApplicationsFeatures Package Dimensions2 High gain : S21e =10dB typ (f=1GHz).unit:mm High cutoff frequency : fT=5.2GHz typ.2059B[2SC5375]0.30.1530 to 0.11 20.3 0.60.65 0.650.92.01 : Base2 : Emitter3 : CollectorSANYO : MCP

Ordering number : ENA1090 2SC5374ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Band OSC,2SC5374AHigh-Frequency Amplifier ApplicationsFeatures High gain : S21e2=10.5dB typ (f=1GHz). High cut-off frequency : fT=5.2GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-B

Ordering number:EN5535ANPN Epitaxial Planar Silicon Transistor2SC5374VHF to UHF Band OSC,High-Frequency Amplifiers ApplicationsFeatures Package Dimensions2 High gain : S21e =10.5dB typ (f=1GHz).unit:mm High cutoff frequency : fT=5.2GHz typ.2106A[2SC5374]0.750.30.60 to 0.10.20.10.5 0.51.61 : Base2 : Emitter3 : CollectorSANYO : SMCPSpec

Ordering number : ENA1090A2SC5374ARF Transistorhttp://onsemi.com10V, 100mA, fT=5.2GHz, NPN Single SMCPFeatures High gain 2 : S21e =10.5dB typ (f=1GHz) High cut-off frequency : fT=5.2GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-to-Emitter Voltage VCEO 10 VEmit

Transistor2SC5379Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesLow noise figure NF.1High gain.High transition frequency fT.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packing.Absolute Maximum Ratings (Ta=25C)0.2 0.1Par

Transistor2SC5379Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesLow noise figure NF.1High gain.High transition frequency fT.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packing.Absolute Maximum Ratings (Ta=25C)0.2 0.1Par

2SC5370Silicon NPN Epitaxial Planar Transistor Application : Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC5370 Symbol Conditions 2SC5370 UnitUnit 0.24.20.210.1c0.52.8VCBO 60 ICBO VCB=60V 10max AVVCEO 40 IEBO VEB=7V 10max AVVEBO 7 V(BR)CEO

2SC5371(BR3DA5371F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High VCEO, small ICBO and VCE(sat). / Applications Color TV