2SC5463 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5463  📄📄 

Código: MX_MY

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.06 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5000 MHz

Capacitancia de salida (Cc): 0.8 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: 2-2E1A

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2SC5463 datasheet

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2SC5463

2SC5463 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5463 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C

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2SC5463

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5463 DESCRIPTION Low Noise Figure NF = 1.1 dB TYP. @V = 8 V, I = 5 mA, f = 1 GHz CE C High Gain S 2 = 12 dB TYP. @V = 8 V, I = 15 mA, f = 1 GHz 21e CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF UHF band low noi

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2SC5463

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 2sc5465.pdf pdf_icon

2SC5463

2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Unit mm Applications High Speed DC-DC Converter Applications Excellent switching times tr = 0.7 s (max) t = 0.5 s (max) (I = 0.08 A) f C High collector breakdown voltage V = 800 V CEO Maximum Ratings (Ta = 25 C) Cha

MOSTRAR MÁS

Otros transistores... 2SC5449, 2SC5450, 2SC5451, 2SC5452, 2SC5453, 2SC5454, 2SC5455, 2SC5457, 2SA1837, 2SC5464, 2SC5468, 2SC5470, 2SC5472, 2SC5473, 2SC5474, 2SC5476, 2SC5477