2SC5463 Datasheet. Specs and Replacement
Type Designator: 2SC5463 📄📄
SMD Transistor Code: MX_MY
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.06 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.8 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: 2-2E1A
2SC5463 Substitution
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2SC5463 datasheet
2SC5463 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5463 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5463 DESCRIPTION Low Noise Figure NF = 1.1 dB TYP. @V = 8 V, I = 5 mA, f = 1 GHz CE C High Gain S 2 = 12 dB TYP. @V = 8 V, I = 15 mA, f = 1 GHz 21e CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF UHF band low noi... See More ⇒
2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Unit mm Applications High Speed DC-DC Converter Applications Excellent switching times tr = 0.7 s (max) t = 0.5 s (max) (I = 0.08 A) f C High collector breakdown voltage V = 800 V CEO Maximum Ratings (Ta = 25 C) Cha... See More ⇒
Detailed specifications: 2SC5449, 2SC5450, 2SC5451, 2SC5452, 2SC5453, 2SC5454, 2SC5455, 2SC5457, 2SA1837, 2SC5464, 2SC5468, 2SC5470, 2SC5472, 2SC5473, 2SC5474, 2SC5476, 2SC5477
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