2N6266 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6266
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 14 W
Tensión colector-base (Vcb): 50 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2000 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta: TO128
Búsqueda de reemplazo de transistor bipolar 2N6266
2N6266 Datasheet (PDF)
2n6262.pdf
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2N6262Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 150V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6263.pdf
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2N6263Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 120V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
2n6261.pdf
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2N6261MECHANICAL DATAHOMETAXIAL-BASEDimensions in mm(inches)MEDIUM POWER SILICONNPN TRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.FEATURES fT = 800 kHz at 0.2A Maximum Safe-area of operation curvesfor dc and pulse operation. VCEV(sus) = 90V min Low Saturation Voltage:VCE(sat = 1.0V at IC = 0.5A)1.27 (0.050
2n6260.pdf
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2N6260Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 40V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif
2n6264.pdf
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2N6264Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 150V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
2n6261.pdf
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6261 DESCRIPTION With TO-66 package Low saturation voltage Wide safe operating area APPLICATIONS Power switching circuits Series and shunt-regulator driver and output stages High-fidelity amplifers Solenoid drivers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.
2n6260.pdf
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6260 DESCRIPTION With TO-66 package Low saturation voltage Wide safe operating area APPLICATIONS Power switching circuits High-fidelity amplifers Solenoid drivers Series and shunt-regulator driver and output stages PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.
2n6262.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6262 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maxi
2n6261.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6261 DESCRIPTION With TO-66 package Low collector saturation voltage Wide safe operating area APPLICATIONS Power switching circuits Series and shunt-regulator driver and output stages High-fidelity amplifers Solenoid drivers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter
2n6263 2n6264.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6263 2N6264 DESCRIPTION With TO-66 package High breakdown voltage Low collector saturation voltage APPLICATIONS A wide variety of medium-to-high power, high-voltage applications Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNI
2n6260.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6260 DESCRIPTION With TO-66 package Low saturation voltage Wide safe operating area APPLICATIONS Power switching circuits High-fidelity amplifers Solenoid drivers Series and shunt-regulator driver and output stages PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 si
Otros transistores... 2N6259 , 2N626 , 2N6260 , 2N6261 , 2N6262 , 2N6263 , 2N6264 , 2N6265 , 2N3906 , 2N6267 , 2N6268 , 2N6269 , 2N627 , 2N6270 , 2N6271 , 2N6272 , 2N6273 .