2SC5622 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SC5622Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output15.50.5 3.00.3 3.20.155 Features High breakdown voltage: 1 500 V High-speed switching5 Wide area of safe operation (ASO)5(4.0)52.00.2 Absolute Maximum Ratings TC = 25C1.10.10.70.1Parameter Symbol Rating Unit5.450.3

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5622DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedLow Saturation VoltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)

2SC5624Silicon NPN EpitaxialHigh Frequency Low Noise AmplifierREJ03G0129-0200Z(Previous ADE-208-978(Z))Rev.2.00Oct.21.2003Features High gain bandwidth productfT = 28 GHz typ. High power gain and low noise figure ;PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHzOutlineCMPAK-42314 1. Emitter2. Collector3. Emitter4. BaseNote: Marking is VH-.

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SC5628Silicon NPN EpitaxialHigh Frequency Amplifier / OscillatorADE-208-979A (Z)2nd. EditionApril 2001Features Super compact package;(1.4 0.8 0.59mm) High power gain and low noise figure;(PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is XZ-.2SC5628Absolute Maximum Rati

2SC5629Silicon NPN EpitaxialHigh Frequency Amplifier / OscillatorADE-208-980 (Z)1st. EditionNov. 2000Features Super compact package;(1.6 0.8 0.7mm) High power gain and low noise figure;(PG = 9 dB typ., NF = 1.1 dB typ., at f = 900MHz, VCE = 1 V)OutlineSMPAK3121. Emitter2. Base3. CollectorNote: Marking is XZ-.2SC5629Absolute Maximum Ra

2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEOUTLINE DRAWING Unit DESCRIPTION 2SC5621 is a super mini package resin sealed silicon NPN 1.5 epitaxial transistor. 0.35 0.8 0.35 It is designed for high frequency voltage application. FEATURE High gain bandwidth product. fT=4.5GHz High gain, low noise. Can opera

Transistor2SC5626For High Frequency Amplify ApplicationSilicon NPN Epitaxial Type (Super Mini type)DESCURIPTIONMitsubishi 2SC5626 is a super mini packege resin sealed OUTLINE DRAWINGsilicon NPN epitaxial ty pe transistor. It is designed f or high Unit:mmf requency amplif y application. 2.10.425 0.4251.25FEATURE1.30Super mini package f or easy mounting

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is al