2SC5622 datasheet и подбор замены

 ..1. Size:57K  panasonic
 2sc5622.pdf 

Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage 1 500 V High-speed switching 5 Wide area of safe operation (ASO) 5 (4.0) 5 2.0 0.2 Absolute Maximum Ratings TC = 25 C 1.1 0.1 0.7 0.1 Parameter Symbol Rating Unit 5.45 0.3

 ..2. Size:188K  inchange semiconductor
 2sc5622.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5622 DESCRIPTION High Breakdown Voltage High Switching Speed Low Saturation Voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 )

 8.1. Size:105K  renesas
 2sc5624.pdf 

2SC5624 Silicon NPN Epitaxial High Frequency Low Noise Amplifier REJ03G0129-0200Z (Previous ADE-208-978(Z)) Rev.2.00 Oct.21.2003 Features High gain bandwidth product fT = 28 GHz typ. High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz Outline CMPAK-4 2 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note Marking is VH -.

 8.2. Size:63K  renesas
 2sc5623.pdf 

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.3. Size:69K  hitachi
 2sc5628.pdf 

2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-979A (Z) 2nd. Edition April 2001 Features Super compact package; (1.4 0.8 0.59mm) High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is XZ- . 2SC5628 Absolute Maximum Rati

 8.4. Size:68K  hitachi
 2sc5629.pdf 

2SC5629 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-980 (Z) 1st. Edition Nov. 2000 Features Super compact package; (1.6 0.8 0.7mm) High power gain and low noise figure; (PG = 9 dB typ., NF = 1.1 dB typ., at f = 900MHz, VCE = 1 V) Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is XZ- . 2SC5629 Absolute Maximum Ra

 8.5. Size:92K  isahaya
 2sc5625.pdf 

 8.6. Size:180K  isahaya
 2sc5621.pdf 

2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING Unit DESCRIPTION 2SC5621 is a super mini package resin sealed silicon NPN 1.5 epitaxial transistor. 0.35 0.8 0.35 It is designed for high frequency voltage application. FEATURE High gain bandwidth product. fT=4.5GHz High gain, low noise. Can opera

 8.7. Size:278K  isahaya
 2sc5626.pdf 

Transistor 2SC5626 For High Frequency Amplify Application Silicon NPN Epitaxial Type (Super Mini type) DESCURIPTION Mitsubishi 2SC5626 is a super mini packege resin sealed OUTLINE DRAWING silicon NPN epitaxial ty pe transistor. It is designed f or high Unit mm f requency amplif y application. 2.1 0.425 0.425 1.25 FEATURE 1.30 Super mini package f or easy mounting

 8.8. Size:236K  isahaya
 2sc5620.pdf 

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is al