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2SC5665 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC5665
   Código: NK
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 9 V
   Tensión colector-emisor (Vce): 4 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.07 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 9500 MHz
   Capacitancia de salida (Cc): 0.95 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SMCP
 
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2SC5665 Datasheet (PDF)

 ..1. Size:36K  sanyo
2sc5665.pdf pdf_icon

2SC5665

Ordering number : ENN73512SC5665NPN Epitaxial Planar Silicon Transistor2SC5665High-Frequency Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low-noise use : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=6.5GHz typ (VCE=1V). 2106A: fT=11.2GHz typ (VCE=3V).[2SC5665] Low operating voltage.0.750.30.630~0.11 20.10.20.

 8.1. Size:33K  sanyo
2sa2031 2sc5669.pdf pdf_icon

2SC5665

Ordering number : ENN65862SA2031 / 2SC5669PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2031 / 2SC5669230V / 15A, AF100W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2031 / 2SC5669]15.63.24.814.0

 8.2. Size:87K  nec
2sc5668.pdf pdf_icon

2SC5665

DATA SHEETNPN SILICON RF TRANSISTOR2SC5668NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATIONFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or overNF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain: MAG. = 12.5 dB TYP. @ f

 8.3. Size:86K  nec
2sc5667.pdf pdf_icon

2SC5665

DATA SHEETNPN SILICON RF TRANSISTOR2SC5667NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or overNF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain: MAG. = 12.5 dB TYP. @ f = 2 GHz, VCE = 2 V,

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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