2SC5665 Datasheet. Specs and Replacement

Type Designator: 2SC5665  📄📄 

SMD Transistor Code: NK

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 9 V

Maximum Collector-Emitter Voltage |Vce|: 4 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.07 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 9500 MHz

Collector Capacitance (Cc): 0.95 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SMCP

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2SC5665 datasheet

 ..1. Size:36K  sanyo

2sc5665.pdf pdf_icon

2SC5665

Ordering number ENN7351 2SC5665 NPN Epitaxial Planar Silicon Transistor 2SC5665 High-Frequency Low-Noise Amplifier and OSC Applications Features Package Dimensions Low-noise use NF=1.5dB typ (f=2GHz). unit mm High cut-off frequency fT=6.5GHz typ (VCE=1V). 2106A fT=11.2GHz typ (VCE=3V). [2SC5665] Low operating voltage. 0.75 0.3 0.6 3 0 0.1 1 2 0.1 0.2 0.... See More ⇒

 8.1. Size:33K  sanyo

2sa2031 2sc5669.pdf pdf_icon

2SC5665

Ordering number ENN6586 2SA2031 / 2SC5669 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2031 / 2SC5669 230V / 15A, AF100W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2031 / 2SC5669] 15.6 3.2 4.8 14.0 ... See More ⇒

 8.2. Size:87K  nec

2sc5668.pdf pdf_icon

2SC5665

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5668 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain MAG. = 12.5 dB TYP. @ f ... See More ⇒

 8.3. Size:86K  nec

2sc5667.pdf pdf_icon

2SC5665

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5667 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain MAG. = 12.5 dB TYP. @ f = 2 GHz, VCE = 2 V, ... See More ⇒

Detailed specifications: 2SC5628, 2SC5629, 2SC5631, 2SC5632, 2SC5645, 2SC5646, 2SC5647, 2SC5654, 2N2222A, 2SC5680, 2SC5681, 2SC5682, 2SC5683, 2SC5684, 2SC5686, 2SC5689, 2SC5690

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