2SC5880 Todos los transistores

2SC5880 Transistors Power transistor (60V, 2A) 2SC5880 Dimensions (Unit mm) Features 1) High speed switching. ATV (tf Typ. 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093 (1) Emitter (2) Collector Taping specifications ... See More ⇒

2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications Unit mm DC/DC Converter Applications High DC current gain hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation VCE (sat) = 0.22 V (max) High-speed switching tf = 95 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Coll... See More ⇒

2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications Unit mm DC-DC Converter Applications High DC current gain h = 400 to 1000 (I = 0.5 A) FE C Low collector-emitter saturation V = 0.22 V (max) CE (sat) High-speed switching t = 55 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collect... See More ⇒

Ordering number EN7331A 2SA2099 / 2SC5888 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. S... See More ⇒

Ordering number ENN7331 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit mm 2041A Features [2SA2099 / 2SC5888] Adoption of MBIT processes. 4.5 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter ... See More ⇒

Ordering number ENN7495 2SA2098 / 2SC5887 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2098 / 2SC5887 High-Current Switching Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit mm 2041A Features [2SA2098 / 2SC5887] 4.5 Adoption of MBIT processes. 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter satu... See More ⇒

Power Transistors 2SC5885 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit mm 9.9 0.3 4.6 0.2 2.9 0.2 Features High breakdown voltage VCBO 1 500 V 3.2 0.1 Wide safe operation area Built-in dumper diode 0.76 0.06 1.25 0.1 1.45 0.15 2.6 0.1 1.2 0.15 Absolute Maximum Ratings TC = 25 C 0.7 0.1 0.75 0.1 ... See More ⇒

Power Transistors 2SC5884 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit mm 9.9 0.3 4.6 0.2 2.9 0.2 Features High breakdown voltage VCBO 1 500 V 3.2 0.1 Wide safe operation area Built-in dumper diode 0.76 0.06 1.25 0.1 1.45 0.15 2.6 0.1 1.2 0.15 Absolute Maximum Ratings TC = 25 C 0.7 0.1 0.75 0.1 Paramet... See More ⇒

UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *Large current capacitance. *Low collector-emitter saturation voltage. *High-speed switching 1 *High allowable power dissipation. APPLICATIONS * relay drivers, lamp drivers, motor drivers, strobes. TO-92SP 1.EMITTER 2.COLLECTOR 3.BASE ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL... See More ⇒

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isc Silicon NPN Power Transistor 2SC5886A DESCRIPTION High switching speed time Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High-Speed Switching Applications DC/DC Converter Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5885 DESCRIPTION High Breakdown Voltage Wide Area of Safe Operation Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for TV, CRT monitor applicaitions. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5887 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High Speed Switching Low Saturation Voltage Complement to Type 2SA2098 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, lamp drivers, motor drivers. ... See More ⇒