2SC5880 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5880
SMD Transistor Code: C5880
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: ATV
2SC5880 Transistor Equivalent Substitute - Cross-Reference Search
2SC5880 Datasheet (PDF)
2sc5880.pdf
2SC5880 Transistors Power transistor (60V, 2A) 2SC5880 Dimensions (Unit : mm) Features 1) High speed switching. ATV(tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically :(Typ. 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093 (1) Emitter(2) CollectorTaping specifications
2sc5886a.pdf
2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications Unit: mmDC/DC Converter Applications High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.22 V (max) High-speed switching: tf = 95 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitColl
2sc5886.pdf
2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications Unit: mm DC-DC Converter Applications High DC current gain: h = 400 to 1000 (I = 0.5 A) FE C Low collector-emitter saturation: V = 0.22 V (max) CE (sat) High-speed switching: t = 55 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollect
2sa2099 2sc5888.pdf
Ordering number : EN7331A2SA2099 / 2SC5888SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA2099 / 2SC5888High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.S
2sc5888.pdf
Ordering number : ENN73312SA2099 / 2SC5888PNP / NPN Epitaxial Planar Silicon Transistors2SA2099 / 2SC5888High-Current Switching ApplicationsApplicationsPackage Dimensions Relay drivers, lamp drivers, motor drivers.unit : mm2041AFeatures[2SA2099 / 2SC5888] Adoption of MBIT processes.4.510.02.8 Large current capacitance.3.2 Low collector-to-emitter
2sa2098 2sa2098 2sc5887.pdf
Ordering number : ENN74952SA2098 / 2SC5887PNP / NPN Epitaxial Planar Silicon Transistors2SA2098 / 2SC5887High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm2041AFeatures [2SA2098 / 2SC5887]4.5 Adoption of MBIT processes. 10.02.8 Large current capacitance.3.2 Low collector-to-emitter satu
2sc5885.pdf
Power Transistors2SC5885Silicon NPN triple diffusion mesa typeHorizontal deflection output for TV, CRT monitorUnit: mm9.90.3 4.60.22.90.2 Features High breakdown voltage: VCBO 1 500 V 3.20.1 Wide safe operation area Built-in dumper diode0.760.061.250.11.450.152.60.11.20.15 Absolute Maximum Ratings TC = 25C0.70.10.750.1
2sc5884.pdf
Power Transistors2SC5884Silicon NPN triple diffusion mesa typeHorizontal deflection output for TVUnit: mm9.90.3 4.60.22.90.2 Features High breakdown voltage: VCBO 1 500 V 3.20.1 Wide safe operation area Built-in dumper diode0.760.061.250.11.450.152.60.11.20.15 Absolute Maximum Ratings TC = 25C0.70.10.750.1Paramet
2sc5889.pdf
UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *Large current capacitance. *Low collector-emitter saturation voltage. *High-speed switching 1*High allowable power dissipation. APPLICATIONS * relay drivers, lamp drivers, motor drivers, strobes. TO-92SP1.EMITTER 2.COLLECTOR 3.BASE ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL
2sc5886a.pdf
isc Silicon NPN Power Transistor 2SC5886ADESCRIPTIONHigh switching speed timeLow collector-to-emitter saturation voltageFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh-Speed Switching ApplicationsDC/DC Converter ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
2sc5885.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5885DESCRIPTIONHigh Breakdown VoltageWide Area of Safe OperationBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for TV, CRT monitorapplicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
2sc5887.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5887DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh Speed SwitchingLow Saturation VoltageComplement to Type 2SA2098100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, lamp drivers, motor drivers.
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .