2SC5909 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SC5909Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage: VCBO 1 500 V High-speed switching: tf

2SC5906 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristi

Power Transistors2SC5904Silicon NPN triple diffusion mesa typeFor Horizontal deflection output for TV, CRT monitorUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage (VCBO 1 700 V) High-speed switching (tf

Power Transistors2SC5905Silicon NPN triple diffusion mesa typeHorizontal deflection output for TV, CRT monitorUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage: VCBO 1 700 V High-speed switching: tf

Power Transistors2SC5902Silicon NPN triple diffusion mesa typeHorizontal deflection output for TVUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage: VCBO 1 700 V Wide safe operation area Built-in dumper diode 55(4.0)52.00.21.10.1 Absolute Maximum Ratings TC = 25C0.70.1Parameter Symbol Rating Unit

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5902DESCRIPTIONHigh Breakdown VoltageBuilt-in damper diode typeHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage color display horizontaldeflection output applicati