2SC5909 Datasheet. Specs and Replacement
Type Designator: 2SC5909 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Package: SC-94 TOP-3E-A1
2SC5909 Substitution
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2SC5909 datasheet
Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage VCBO 1 500 V High-speed switching tf ... See More ⇒
2SC5906 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage VCE (sat) = 0.2 V (max) High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristi... See More ⇒
Power Transistors 2SC5904 Silicon NPN triple diffusion mesa type For Horizontal deflection output for TV, CRT monitor Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage (VCBO 1 700 V) High-speed switching (tf ... See More ⇒
Power Transistors 2SC5905 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage VCBO 1 700 V High-speed switching tf ... See More ⇒
Detailed specifications: 2SC5885, 2SC5890, 2SC5894, 2SC5896, 2SC5899, 2SC5902, 2SC5904, 2SC5905, BC547, 2SC5912, 2SC5913, 2SC5916, 2SC5926, 2SC5931, 2SC5935, 2SC5939, 2SC5945
Keywords - 2SC5909 pdf specs
2SC5909 cross reference
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History: TP911 | TP751
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