2SA1580 Datasheet. Equivalente

 ..1. Size:19K  sanyo
 2sa1580 2sc4104.pdf

Ordering number EN3172 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1580/2SC4104 High-Definition CRT Display Applications Features Package Dimensions High fT. unit mm Small reverse transfer capacitance. 2018A Adoption of FBET process. [2SA1580/2SC4104] C Collector B Base E Emitter ( ) 2SA1580 SANYO CP Specifications Absolute Maximum Ratings at Ta = 25

 ..2. Size:503K  kexin
 2sa1580.pdf

SMD Type or SMD Type TransistICs PNP Transistors 2SA1580 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High fT. Small reverse transfer capacitance. 1 2 +0.1 +0.05 0.95 -0.1 Adoption of FBET process. 0.1 -0.01 +0.1 1.9 -0.1 Complementary to 2SC4104 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base vo

 8.1. Size:215K  toshiba
 2sa1588.pdf

2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C Complementary to 2SC4118 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Coll

 8.2. Size:200K  toshiba
 2sa1586.pdf

2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 400 Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2

 8.3. Size:303K  toshiba
 2sa1586-o 2sa1586-y 2sa1586-gr.pdf

2SA1586 Bipolar Transistors Silicon PNP Epitaxial Type 2SA1586 1. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage VCEO = -50 V (3) High collector current IC = -150 mA (max) (4) High hFE hFE = 70 to 400 (5) Excellent hFE linearity hFE

 8.4. Size:323K  toshiba
 2sa1587.pdf

2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = -120 V Excellent h linearity h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High hFE hFE = 200 700 Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SC4117 Small packag

 8.5. Size:330K  toshiba
 2sa1587gr 2sa1587bl.pdf

2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = -120 V Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 200 to 700 Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SC4117 Small package

 8.6. Size:204K  toshiba
 2sa1588-o 2sa1588-y 2sa1588-gr.pdf

2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA Complementary to 2SC4118 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collecto

 8.7. Size:88K  sanyo
 2sa1582 2sc4113.pdf

 8.8. Size:64K  rohm
 2sb1424 2sa1585s.pdf

2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S External dimensions (Unit mm) Features 1) Low VCE(sat). 2SB1424 2SA1585S VCE(sat) = -0.2V (Typ.) 4 0.2 2 0.2 4.5+0.2 (IC/IB = -2A / -0.1A) -0.1 1.5 0.1 1.6 0.1 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15 (1) (2) (3) -0.05

 8.9. Size:101K  rohm
 2sa1585s 2sb1424 2sb1424.pdf

Transistors Low VCE(sat) Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC/IB = *2A / *0.1A) 2) Excellent DC current gain charac- teristics. 3) Complements the 2SD2150 / 2SC4115S. FStructure Epitaxial planar type PNP silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-596-A74) 201 Transist

 8.10. Size:351K  mcc
 2sa1585s-q.pdf

2SA1585S MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1585S-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1585S-R Fax (818) 701-4939 Features PNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Transistors Moi

 8.11. Size:351K  mcc
 2sa1585s-r.pdf

2SA1585S MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1585S-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1585S-R Fax (818) 701-4939 Features PNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Transistors Moi

 8.12. Size:76K  no
 2sa1581.pdf

 8.13. Size:77K  secos
 2sa1586.pdf

2SA1586 -0.15 A, -50 V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain High Voltage and High Current A L Complementary to 2SC4116 3 3 Small Package Top View C B 1 1 2 2 K E APPLICATIONS General Purpose Amplifi

 8.14. Size:1507K  jiangsu
 2sa1585.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC T 2SA1585 TRANSISTOR (PNP) SOT-23 FEATURES Low VCE(sat) Excellent DC current gain characteristics. Power dissipation 1. BASE MAXIMUM RATINGS* TA=25 unless otherwise noted 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Coll

 8.15. Size:278K  htsemi
 2sa1586.pdf

2SA1 58 6 TRANSISTOR(PNP) FEATURES SOT 323 High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package APPLICATIONS General Purpose Amplification. 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter

 8.16. Size:242K  lge
 2sa1585s to-92s.pdf

2SA1585S TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) Excellent DC current gain characteristics. Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter

 8.17. Size:920K  kexin
 2sa1588.pdf

SMD Type Transistors PNP Transistors 2SA1588 Features Excellent hFE linearity hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA Complementary to 2SC4118 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Collector

 8.18. Size:1130K  kexin
 2sa1586.pdf

SMD Type Transistors PNP Transistors 2SA1586 Features High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collec

 8.19. Size:1603K  kexin
 2sa1587.pdf

SMD Type Transistors PNP Transistors 2SA1587 Features High voltage Low noise Complementary to 2SC4117 Small Package 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC