Биполярный транзистор 2SA1580 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1580
Маркировка: QL
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 70 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 350 MHz
Ёмкость коллекторного перехода (Cc): 1.7 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: CP
2SA1580 Datasheet (PDF)
2sa1580 2sc4104.pdf
Ordering number:EN3172PNP/NPN Epitaxial Planar Silicon Transistors2SA1580/2SC4104High-Definition CRT Display ApplicationsFeatures Package Dimensions High fT.unit:mm Small reverse transfer capacitance.2018A Adoption of FBET process.[2SA1580/2SC4104]C : CollectorB : BaseE : Emitter( ) : 2SA1580SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25
2sa1580.pdf
SMD Type orSMD Type TransistICsPNP Transistors 2SA1580SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesHigh fT.Small reverse transfer capacitance.1 2+0.1+0.050.95 -0.1Adoption of FBET process. 0.1 -0.01+0.11.9 -0.1 Complementary to 2SC41041.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base vo
2sa1588.pdf
2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C Complementary to 2SC4118 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitColl
2sa1586.pdf
2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit: mmHigh voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2
2sa1586-o 2sa1586-y 2sa1586-gr.pdf
2SA1586Bipolar Transistors Silicon PNP Epitaxial Type2SA15861. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications2. Features(1) AEC-Q101 qualified (Please see the orderable part number list)(2) High voltage: VCEO = -50 V(3) High collector current: IC = -150 mA (max)(4) High hFE: hFE = 70 to 400(5) Excellent hFE linearity: hFE
2sa1587.pdf
2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = -120 V Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC4117 Small packag
2sa1587gr 2sa1587bl.pdf
2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = -120 V Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 200 to 700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC4117 Small package
2sa1588-o 2sa1588-y 2sa1588-gr.pdf
2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA Complementary to 2SC4118 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollecto
2sb1424 2sa1585s.pdf
2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S External dimensions (Unit : mm) Features 1) Low VCE(sat). 2SB1424 2SA1585SVCE(sat) = -0.2V (Typ.) 40.2 20.24.5+0.2(IC/IB = -2A / -0.1A) -0.11.50.11.60.12) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15(1) (2) (3)-0.05
2sa1585s 2sb1424 2sb1424.pdf
TransistorsLow VCE(sat) Transistor (*20V, *3A)2SB1424 / 2SA1585SFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = *0.2V (Typ.)(IC/IB = *2A / *0.1A)2) Excellent DC current gain charac-teristics.3) Complements the 2SD2150 /2SC4115S.FStructureEpitaxial planar typePNP silicon transistorFAbsolute maximum ratings (Ta = 25_C)(96-596-A74)201Transist
2sa1585s-q.pdf
2SA1585SMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SA1585S-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1585S-RFax: (818) 701-4939FeaturesPNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability ratingTransistors Moi
2sa1585s-r.pdf
2SA1585SMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SA1585S-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1585S-RFax: (818) 701-4939FeaturesPNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability ratingTransistors Moi
2sa1586.pdf
2SA1586 -0.15 A, -50 V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High DC Current Gain High Voltage and High Current AL Complementary to 2SC4116 33 Small Package Top View C B11 22K EAPPLICATIONS General Purpose Amplifi
2sa1585.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC T 2SA1585 TRANSISTOR (PNP) SOT-23 FEATURES Low VCE(sat) Excellent DC current gain characteristics. Power dissipation 1. BASE MAXIMUM RATINGS* TA=25 unless otherwise noted 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Coll
2sa1586.pdf
2SA1 58 6TRANSISTOR(PNP)FEATURES SOT323 High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package APPLICATIONS General Purpose Amplification. 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter
2sa1585s to-92s.pdf
2SA1585S TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) Excellent DC current gain characteristics. Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter
2sa1588.pdf
SMD Type TransistorsPNP Transistors2SA1588 Features Excellent hFE linearity : hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA Complementary to 2SC41181.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Collector
2sa1586.pdf
SMD Type TransistorsPNP Transistors2SA1586 Features High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collec
2sa1587.pdf
SMD Type TransistorsPNP Transistors2SA1587 Features High voltage Low noise Complementary to 2SC4117 Small Package1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050