2SA2021 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistors2SA2021Silicon PNP epitaxial planer typeUnit: mmFor general amplification0.33+0.05 0.10+0.050.02 0.02Complementary to 2SC56093 Features High foward current transfer ratio hFE 0.23+0.05 1 20.02(0.40) (0.40) SSS-mini type package, allowing downsizing and thinning of the0.800.05equipment and automatic insertion through the tape packing1.2

Ordering number:ENN6367PNP/NPN Epitaxial Planar Silicon Transistors2SA2022/2SC5610DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2041AFeatures [2SA2022/2SC5610]4.5 Adoption of MBIT processes.10.02.8 Large current capacitance.3.2 Low collector-to-emitter saturation voltage. High-

Ordering number:ENN6404PNP Epitaxial Planar Silicon Transistor2SA2025DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2033AFeatures [2SA2025]2.24.0 Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage.0.40.5 High-speed switching.

Ordering number:ENN6336PNP/NPN Epitaxial Planar Silicon Transistors2SA2023/2SC561160V / 5A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2165 Inverters, converters (strobes, flash, fluorescent lamp[2SA2023/2SC5611]lighting circuit).8.04.0 Power amplifier (high-power car stereo,

General Purpose Transistor (50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.251.62.1Structure 2.8Epitaxial planar type. PNP silicon transistor 0.1 to 0.40.3 to 0.6Each lead has same dime

2SA2029 / 2SA1774EB / 2SA17742SA1576UB / 2SA1576A / 2SA1037AKDatasheetGeneral Purpose Transistor (-50V, -150mA)lOutlinelParameter Value SOT-723 SOT-416FLVCEO-50VIC-150mA 2SA2029 2SA1774EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1) General Purpose. 2) Complementary:2SC5658/2SC4617EB2SA1774 2SA1576UB /2SC4617/2SC4081UB/2S

2SA2029FHA / 2SA1774EB / 2SA1774FRA / 2SA1576UB / 2SA1576AFRA / 2SA1037AKFRA2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AKDatasheetPNP -150mA -50V General Purpose TransistorsAEC-Q101 QualifiedOutline VMT3 EMT3FParameter ValueCollectorCollectorVCEO50VBaseBaseIC150mAEmitterEmitter2SA2029 2SA1774EB2SA2029FHA(SC-105AA) (SC-89)F

2SA2029 / 2SA1774EB / 2SA17742SA1576UB / 2SA1576U3 / 2SA1037AKDatasheetGeneral purpose Transistor (-50V, -150mA)lOutlinelParameter Value SOT-723 SOT-416FLVCEO-50VIC-150mA 2SA2029 2SA1774EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Excellent hFE linearity. 2)Complements the 2SC5658/2SC4617EB/2SA1774 2SA1576UB 2SC4617/2SC

2SA2029M3T5GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesPNP GENERAL Reduces Board SpacePURPOSE AMPLIFIER High hFE, 210-460 (Typ

2SA2029M3T5GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesPNP GENERAL Reduces Board SpacePURPOSE AMPLIFIER High hFE, 210-460 (Typ

2SA2029M3T5GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium. Reduces Board Space High hFE, 210-460 (Typical)PNP GENERAL Low VCE(sat),

2SA2029M3PNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardwww.onsemi.comspace is at a premium.FeaturesPNP GENERAL Reduces Board SpacePURPOSE AMPLIFIER High hFE, 210-460 (Typical)

Transistors2SA2028Silicon PNP epitaxial planer typeUnit: mmFor DC-DC converter0.3+0.1 0.15+0.100.050.03 Features Large current capacitance Low collector to emitter saturation voltage1 2 High-speed switching(0.65) (0.65) Small type package, allowing downsizing and thinning of the1.30.1equipment.2.00.210 Absolute Maximum Ratings Ta =

SMALL-SIGNAL TRANSISTOR2SA2027 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)DESCRIPTIONOUTLINE DRAWING Unit2SA2027 is a super mini package resin sealedsilicon PNP epitaxial transistor,FE rank 4.40.1 Lot No.It is designed for high voltage application.1.60.1.12.50.1FEATURESmall collector to emitte

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors2SA2029 General urpose ransistors (PNP)SOT-723 FEATURES Excellent hFE linearity Complements the 2SC56581. BASE 2. EMITTER3. COLLECTOR Marking: FQ FR FS Absolute maximum ratings (Ta=25) Symbol Parameter Limit UnitVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Volta

LESHAN RADIO COMPANY, LTD.PNP Silicon GeneralL2SA2029QM3T5GPurpose Amplifier TransistorL2SA2029RM3T5GThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where board3space is at a premium. Reduces Board Space High hFE, 210-460 (Typical)2

LESHAN RADIO COMPANY, LTD.PNP Silicon GeneralL2SA2029QM3T5GPurpose Amplifier TransistorL2SA2029RM3T5GThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where board3space is at a premium. Reduces Board Space High hFE, 210-460 (Typical)2

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2022DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOHigh-speed switching.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, lamp drivers, motor drivers, strobes.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV