2SA2023 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA2023 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Ganancia de corriente contínua (hFE): 110
Encapsulados: TO-126ML
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2SA2023 datasheet
..1. Size:41K sanyo
2sa2023 2sc5611.pdf 
Ordering number ENN6336 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2023/2SC5611 60V / 5A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2165 Inverters, converters (strobes, flash, fluorescent lamp [2SA2023/2SC5611] lighting circuit). 8.0 4.0 Power amplifier (high-power car stereo,
8.1. Size:51K sanyo
2sa2022 2sc5610.pdf
Ordering number ENN6367 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2022/2SC5610 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2041A Features [2SA2022/2SC5610] 4.5 Adoption of MBIT processes. 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter saturation voltage. High-
8.2. Size:38K sanyo
2sa2025.pdf
Ordering number ENN6404 PNP Epitaxial Planar Silicon Transistor 2SA2025 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2033A Features [2SA2025] 2.2 4.0 Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. 0.4 0.5 High-speed switching.
8.3. Size:168K rohm
2sa1037ak 2sa1576a 2sa1774 2sa2029 2sa933as.pdf
General Purpose Transistor ( 50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.25 1.6 2.1 Structure 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dime
8.4. Size:2600K rohm
2sa2029 2sa1774eb 2sa1774 2sa1576ub 2sa1576a 2sa1037ak.pdf
2SA2029 / 2SA1774EB / 2SA1774 2SA1576UB / 2SA1576A / 2SA1037AK Datasheet General Purpose Transistor (-50V, -150mA) lOutline l Parameter Value SOT-723 SOT-416FL VCEO -50V IC -150mA 2SA2029 2SA1774EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1) General Purpose. 2) Complementary 2SC5658/2SC4617EB 2SA1774 2SA1576UB /2SC4617/2SC4081UB/2S
8.5. Size:1342K rohm
2sa2029fha.pdf
2SA2029FHA / 2SA1774EB / 2SA1774FRA / 2SA1576UB / 2SA1576AFRA / 2SA1037AKFRA 2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK Datasheet PNP -150mA -50V General Purpose Transistors AEC-Q101 Qualified Outline VMT3 EMT3F Parameter Value Collector Collector VCEO 50V Base Base IC 150mA Emitter Emitter 2SA2029 2SA1774EB 2SA2029FHA (SC-105AA) (SC-89) F
8.6. Size:2821K rohm
2sa2029 2sa1774eb 2sa1774 2sa1576ub 2sa1576u3 2sa1037ak.pdf
2SA2029 / 2SA1774EB / 2SA1774 2SA1576UB / 2SA1576U3 / 2SA1037AK Datasheet General purpose Transistor (-50V, -150mA) lOutline l Parameter Value SOT-723 SOT-416FL VCEO -50V IC -150mA 2SA2029 2SA1774EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Excellent hFE linearity. 2)Complements the 2SC5658/2SC4617EB/ 2SA1774 2SA1576UB 2SC4617/2SC
8.7. Size:97K onsemi
nsv2sa2029m3t5g.pdf
2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typ
8.8. Size:93K onsemi
2sa2029m3t5g.pdf
2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typ
8.9. Size:45K onsemi
2sa2029m3-d.pdf
2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Reduces Board Space High hFE, 210-460 (Typical) PNP GENERAL Low VCE(sat),
8.10. Size:116K onsemi
2sa2029m3.pdf
2SA2029M3 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board www.onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typical)
8.11. Size:43K panasonic
2sa2028.pdf
Transistors 2SA2028 Silicon PNP epitaxial planer type Unit mm For DC-DC converter 0.3+0.1 0.15+0.10 0.05 0.0 3 Features Large current capacitance Low collector to emitter saturation voltage 1 2 High-speed switching (0.65) (0.65) Small type package, allowing downsizing and thinning of the 1.3 0.1 equipment. 2.0 0.2 10 Absolute Maximum Ratings Ta =
8.12. Size:45K panasonic
2sa2021.pdf
Transistors 2SA2021 Silicon PNP epitaxial planer type Unit mm For general amplification 0.33+0.05 0.10+0.05 0.02 0.02 Complementary to 2SC5609 3 Features High foward current transfer ratio hFE 0.23+0.05 1 2 0.02 (0.40) (0.40) SSS-mini type package, allowing downsizing and thinning of the 0.80 0.05 equipment and automatic insertion through the tape packing 1.2
8.14. Size:45K isahaya
2sa2027.pdf
SMALL-SIGNAL TRANSISTOR 2SA2027 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) DESCRIPTION OUTLINE DRAWING Unit 2SA2027 is a super mini package resin sealed silicon PNP epitaxial transistor, FE rank 4.4 0.1 Lot No. It is designed for high voltage application. 1.6 0.1 . 1 2.5 0.1 FEATURE Small collector to emitte
8.15. Size:581K jiangsu
2sa2029.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors 2SA2029 General urpose ransistors (PNP) SOT-723 FEATURES Excellent hFE linearity Complements the 2SC5658 1. BASE 2. EMITTER 3. COLLECTOR Marking FQ FR FS Absolute maximum ratings (Ta=25 ) Symbol Parameter Limit Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Volta
8.18. Size:192K inchange semiconductor
2sa2022.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2022 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO High-speed switching. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, lamp drivers, motor drivers, strobes. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
Otros transistores... 2SA2007, 2SA2009, 2SA2010, 2SA2011, 2SA2014, 2SA2015, 2SA2021, 2SA2022, 13007, 2SA2025, 2SA2028, 2SA2037, 2SA2043, 2SA2044, 2SA2046, 2SA2047, 2SA2048
