2SA2048 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA2048 Transistor Medium power transistor (-30V, -1.0A) 2SA2048 External dimensions (Units mm) Features 1) High speed switching. (Tf Typ. 20ns at IC = -1.0A) 2.8 1.6 TSMT3 2) Low saturation voltage, typically (Typ. -150mV at IC = -500mA, IB = -50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5730 (1)Base Each l

Ordering number ENN6913A 2SA2040 / 2SC5707 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2040 / 2SC5707 High Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

Ordering number ENN6915 2SA2044 / 2SC5710 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2044 / 2SC5710 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2045B [2SA2044 / 2SC5710] Features 6.5 Adoption of FBET and MBIT processes. 2.3 5.0 0.5 4 Large current capacitance. Low collecto

Ordering number ENN6914 2SA2043 / 2SC5709 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2043 / 2SC5709 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2045B [2SA2043 / 2SC5709] Features 6.5 Adoption of FBET and MBIT processes. 2.3 5.0 0.5 4 Large current capacitance. Low collector

2SA2049 Transistor Medium power transistor (-30V, -2.0A) 2SA2049 External dimensions (Units mm) Features 1) High speed switching. (Tf Typ. 20ns at IC = -2.0A) 4.0 MPT3 1.0 2.5 0.5 2) Low saturation voltage, typically (1) (Typ. -250mV at IC = -1.0A, IB = -100mA) (2) 3) Strong discharge power for inductive load and (3) capacitance load. 4) Complements the 2S

2SA2047 Transistor Medium power transistor (-30V, -0.5A) 2SA2047 External dimensions (Units mm) Features 1) High speed switching. (Tf Typ. 40ns at IC = -500mA) UMT3 2) Low saturation voltage, typically (Typ. -150mV at IC = -100A, IB = -100mA) 1.25 3) Strong discharge power for inductive load and 2.1 capacitance load. 4) Complements the 2SC5729 (1)Emitter Ea

Ordering number EN6913B 2SA2040/2SC5707 Bipolar Transistor http //onsemi.com (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Ordering number EN6913B 2SA2040/2SC5707 Bipolar Transistor http //onsemi.com (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Transistors 2SA2046 Silicon PNP epitaxial planer type Unit mm For DC-DC converter 0.40+0.10 -0.05 0.16+0.10 1.45 -0.06 3 Features Low collector to emitter saturation voltage VCE(sat) Mini3-G1 type package, allowing downsizing and thinning of the 1 2 equipment and automatic insertion through the tape packing 0.95 0.95 1.90 0.20 2.90+0.20 Absolute Maximum Ratings Ta