2SA2063 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number : ENN69882SA2063 / 2SC5775PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2063 / 2SC5775160V / 12A, AF90W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2063 / 2SC5775]15.63.24.814.02

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2063DESCRIPTIONLarge current capacitanceWide ASO and high durability against breakdown100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS160V/12V,AF 90W output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

2SA2061 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2061 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (I = 0.5 A) C Low collector-emitter saturation voltage: V = -0.19 V (max) CE (sat) High-speed switching: t = 40 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristi

2SA2066 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2066 High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 200 to 500 (I = -0.2 A) C Low collector-emitter saturation voltage: V = -0.19 V (max) CE (sat) High-speed switching: t = 25 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

2SA2069 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2069 High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 200 to 500 (I = -0.15 A) C Low collector-emitter saturation voltage: V = -0.14 V (max) CE (sat) High-speed switching: t = 37 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristics Symbol Rating Uni

2SA2060 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2060 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = -0.3 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteris

2SA2065 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2065 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (I = -0.15 A) C Low collector-emitter saturation voltage: V = -0.14 V (max) CE (sat) High-speed switching: t = 37 ns (typ.) fMaximum Ratings (Ta = 25C) Characteris

Ordering number : ENN69872SA2062 / 2SC5774PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2062 / 2SC5774140V / 10A, AF 70W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2062 / 2SC5774]15.63.24.814.0

Power Transistors2SA2064Silicon PNP epitaxial planar typeUnit: mm4.60.2Power supply for audio & visual equipments9.90.32.90.2such as TVs and VCRsIndustrial equipments such as DC-DC converters 3.20.1 Features High speed switching (tstg: storage time/tf: fall time is short) Low collector-emitter saturation voltage VCE(sat) 1.40.22.60.11.60.2

Power Transistors2SA2067Silicon PNP epitaxial planar typeUnit: mmPower supply for audio & visual equipments10.00.2 5.00.11.00.2such as TVs and VCRsIndustrial equipments such as DC-DC converters Features1.20.1 High speed switching (tstg: storage time/tf: fall time is short)C 1.01.480.2 Low collector-emitter saturation voltage VCE(sat)2.250.2

ST 2SA2060U PNP Silicon Epitaxial Planar Transistor for high speed switching, DC-DC converter and strobe applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 7 VCollector Current (DC) -IC 2 ACollector Current (Pulse) -ICP 3.5 ABase Current -IB 200 mA0.

SMD Type TransistorsPNP Transistors2SA2061SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-2.5A1 2 Collector Emitter Voltage VCEO=-20V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Co

SMD Type TransistorsPNP Transistors2SA2060SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-50V High-Speed Switching Applications0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Volt

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2062DESCRIPTIONLarge current capacitanceWide ASO and high durability against breakdown100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS140V/10V,AF 70W output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll