2SB1414 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1414 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hFE): 90
Encapsulados: MT-3-A1
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2SB1414 datasheet
..1. Size:81K panasonic
2sb1414.pdf 
Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Unit mm 7.5 0.2 4.5 0.2 Complementary to 2SD2134 Features Excellent current IC characteristics of forward current transfer ratio 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 hFE vs. collector High transition frequency fT 0.7 0.1 Allowing automatic insertio
8.2. Size:107K rohm
2sb1386 2sb1412 2sb1326.pdf
2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Unit mm) Features 1) Low VCE(sat). 2SB1386 2SB1412 VCE(sat) = -0.35V (Typ.) 2.3+0.2 6.5 0.2 -0.1 4.5+0.2 C0.5 -0.1 5.1+0.2 1.5+0.2 -0.1 0.5 0.1 (IC/IB = -4A / -0.1A) 1.6 0.1 -0.1 2) Excellent DC current gain characteristics. 3) Compleme
8.3. Size:61K panasonic
2sb1418.pdf
Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington Unit mm For power amplification Complementary to 2SD2138 and 2SD2138A 5.0 0.1 10.0 0.2 1.0 Features High foward current transfer ratio hFE 90 High-speed switching Allowing automatic insertion with radial taping 1.2 0.1 C1.0 2.25 0.2 0.65 0.1 Absolute Maximum Ratings (TC=25 C) 0.35
8.4. Size:55K panasonic
2sb1417.pdf
Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity 5.0 0.1 Low collector to emitter saturation voltage VCE(sat) 10.0 0.2 1.0 Allowing automatic insertion with radial taping 90 Absolute Maximum Ratings (T
8.5. Size:82K panasonic
2sb1416.pdf
Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Unit mm 7.5 0.2 4.5 0.2 Complementary to 2SD2136 Features High forward current transfer ratio hFE which has satisfactory 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 linearity Low collector-emitter saturation voltage VCE(sat) 0.7 0.1 Allowing automatic insertion with
8.6. Size:186K utc
2sb1412.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing
8.7. Size:216K utc
2sb1412l-p 2sb1412l-q 2sb1412l-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing
8.8. Size:255K lge
2sb1412.pdf
2SB1412(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current Continuous -5 A PC Collector Po
8.9. Size:249K wietron
2sb1412.pdf
2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 Features * Excellent DC Current Gain Characteristics D-PAK(TO-252) * Low VCE(Sat) Mechanical Data * Case Molded Plastic * Weight 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol Value Unit VCBO -30 V Collector to Base Voltage VCEO -20 V Collector to Emitter Voltag
8.10. Size:1550K kexin
2sb1412.pdf
SMD Type Transistors PNP Transistors 2SB1412 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 Excellent DC current gain characteristics Low VCE(SAT) VCE(SAT)= -0.35V (Typ) 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbo
8.11. Size:39K kexin
2sb1412-p.pdf
SMD Type Transistors Low Frequency Transistor 2SB1412 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Low VCE(sat). PNP silicon transistor. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emit
8.12. Size:39K kexin
2sb1412-q.pdf
SMD Type Transistors Low Frequency Transistor 2SB1412 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Low VCE(sat). PNP silicon transistor. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emit
8.13. Size:39K kexin
2sb1412-r.pdf
SMD Type Transistors Low Frequency Transistor 2SB1412 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Low VCE(sat). PNP silicon transistor. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emit
8.14. Size:245K lzg
2sb1412 3ca1412.pdf
2SB1412(3CA1412) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD2118(3DG2118) Features Low V ,excellent DC current gain characteristics, complements the 2SD2118(3DG2118). CE(sat) /Absolute maximum ratings(Ta=25 )
8.15. Size:253K inchange semiconductor
2sb1412.pdf
isc Silicon PNP Power Transistor 2SB1412 DESCRIPTION Low collector-to-emitter saturation voltage V = -1.0V(Max)@I = -4A CE(sat) C Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec
8.16. Size:199K inchange semiconductor
2sb1419.pdf
isc Silicon PNP Power Transistor 2SB1419 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER
8.17. Size:213K inchange semiconductor
2sb1411.pdf
isc Silicon PNP Darlington Power Transistor 2SB1411 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -1A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -1A, I = -2mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS H
Otros transistores... 2SA9012, 2SA9015, 2SA986A, 2SB1066M, 2SB1076M, 2SB1130AM, 2SB1261-Z, 2SB1321A, D209L, 2SB1446, 2SB1448, 2SB1453, 2SB1470, 2SB1475, 2SB1492, 2SB1493, 2SB1502
