2SB1448 Datasheet. Equivalente

 ..1. Size:321K  shindengen
 2sb1448.pdf

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1448 Case ITO-3P (TP15J10) -15A PNP RATINGS Unit mm

 8.1. Size:57K  rohm
 2sa1797 2sb1443.pdf

2SA1797 / 2SB1443 Transistors Power Transistor (-50V, -2A) 2SA1797 / 2SB1443 Features 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797 and 2SC4672. Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage

 8.2. Size:165K  rohm
 2sb1443.pdf

Power Transistor (-50V, -2A) 2SB1443 Features Dimensions (Unit mm) 1) Low saturation voltage. ATV VCE (sat) = -0.35V (Max.) at IC / IB = -1A / 50mA. 2) Excellent DC current gain characteristics. Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit (1) (2) (3) (1) (2) (3) (1) Emitter Collector-base voltage VCBO -50 V (2) Collector Collector-emitter

 8.3. Size:45K  rohm
 2sa1797 2sb1443 2sc4672.pdf

2SA1797 / 2SB1443 Transistors Transistors 2SC4672 (96-100-B208) (96-181-D208) 291

 8.4. Size:44K  panasonic
 2sb1446 e.pdf

Transistor 2SB1446 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD2179 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbo

 8.5. Size:39K  panasonic
 2sb1446.pdf

Transistor 2SB1446 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD2179 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbo

 8.6. Size:41K  panasonic
 2sb1440 e.pdf

Transistor 2SB1440 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD2185 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0

 8.7. Size:79K  panasonic
 2sb1440.pdf

Transistors 2SB1440 Silicon PNP epitaxial planar type Unit mm For low-frequency output amplification 4.5 0.1 1.6 0.2 1.5 0.1 Complementary to 2SD2185 Features Low collector-emitter saturation voltage VCE(sat) 1 23 0.4 0.08 0.5 0.08 0.4 0.04 Mini Power type package, allowing downsizing of the equipment 1.5 0.1 and automatic insertion through the tape packing and

 8.8. Size:99K  secos
 2sb1440.pdf

2SB1440 -2 A, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Low collector-emitter saturation voltage VCE(sat) For low-frequency output amplification B 1 C 2 Complements to 2SD2185 E 3 A E C PACKAGE INFORMATION Package MPQ LeaderSize B D

 8.9. Size:437K  jiangsu
 2sb1440.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1440 TRANSISTOR (PNP) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 For low-frequency output amplification 2 Complementary to 2SD2185 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para meter V

 8.10. Size:219K  htsemi
 2sb1440.pdf

2SB1 440 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 For low-frequency output amplification 2 Complementary to 2SD2185 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Bas

 8.11. Size:197K  lge
 2sb1440 sot-89.pdf

2SB1440 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 Low collector-emitter saturation voltage VCE(sat) MIN 0.53 0.40 For low-frequency output amplification 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 Complementary to 2SD2185 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted)

 8.12. Size:498K  willas
 2sb1440.pdf

FM120-M WILLAS 2SB1440THRU SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TRANSISTOR (PNP) SOD-123H Low profile surface mounted application

 8.13. Size:871K  kexin
 2sb1440.pdf

SMD Type Transistors PNP Transistors 2SB1440 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-50V Complementary to 2SD2185 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO