2SB1448 Todos los transistores

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1448 Case ITO-3P (TP15J10) -15A PNP RATINGS Unit mm

2SA1797 / 2SB1443 Transistors Power Transistor (-50V, -2A) 2SA1797 / 2SB1443 Features 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797 and 2SC4672. Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage

Power Transistor (-50V, -2A) 2SB1443 Features Dimensions (Unit mm) 1) Low saturation voltage. ATV VCE (sat) = -0.35V (Max.) at IC / IB = -1A / 50mA. 2) Excellent DC current gain characteristics. Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit (1) (2) (3) (1) (2) (3) (1) Emitter Collector-base voltage VCBO -50 V (2) Collector Collector-emitter

2SA1797 / 2SB1443 Transistors Transistors 2SC4672 (96-100-B208) (96-181-D208) 291

Transistor 2SB1446 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD2179 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbo

Transistor 2SB1446 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD2179 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbo

Transistor 2SB1440 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD2185 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0

Transistors 2SB1440 Silicon PNP epitaxial planar type Unit mm For low-frequency output amplification 4.5 0.1 1.6 0.2 1.5 0.1 Complementary to 2SD2185 Features Low collector-emitter saturation voltage VCE(sat) 1 23 0.4 0.08 0.5 0.08 0.4 0.04 Mini Power type package, allowing downsizing of the equipment 1.5 0.1 and automatic insertion through the tape packing and

2SB1440 -2 A, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Low collector-emitter saturation voltage VCE(sat) For low-frequency output amplification B 1 C 2 Complements to 2SD2185 E 3 A E C PACKAGE INFORMATION Package MPQ LeaderSize B D

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1440 TRANSISTOR (PNP) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 For low-frequency output amplification 2 Complementary to 2SD2185 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para meter V

2SB1 440 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 For low-frequency output amplification 2 Complementary to 2SD2185 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Bas

2SB1440 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 Low collector-emitter saturation voltage VCE(sat) MIN 0.53 0.40 For low-frequency output amplification 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 Complementary to 2SD2185 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted)

FM120-M WILLAS 2SB1440THRU SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TRANSISTOR (PNP) SOD-123H Low profile surface mounted application

SMD Type Transistors PNP Transistors 2SB1440 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-50V Complementary to 2SD2185 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO