2SB1448 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1448 Case : ITO-3P(TP15J10)-15A PNPRATINGSUnit : mm

2SA1797 / 2SB1443 Transistors Power Transistor (-50V, -2A) 2SA1797 / 2SB1443 Features 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797 and 2SC4672. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base voltage VCBO -50 VCollector-emitter voltage

Power Transistor (-50V, -2A) 2SB1443 Features Dimensions (Unit : mm) 1) Low saturation voltage. ATVVCE (sat) = -0.35V (Max.) at IC / IB = -1A / 50mA. 2) Excellent DC current gain characteristics. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit (1) (2) (3)(1) (2) (3)(1) EmitterCollector-base voltage VCBO -50 V(2) CollectorCollector-emitter

2SA1797 / 2SB1443TransistorsTransistors2SC4672(96-100-B208)(96-181-D208)291

Transistor2SB1446Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD21792.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symbo

Transistor2SB1446Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD21792.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symbo

Transistor2SB1440Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD21851.5 0.14.5 0.1Features1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-45zine packing.0.4 0.080.4 0

Transistors2SB1440Silicon PNP epitaxial planar typeUnit: mmFor low-frequency output amplification4.50.11.60.2 1.50.1Complementary to 2SD2185 Features Low collector-emitter saturation voltage VCE(sat)1 230.40.08 0.50.08 0.40.04 Mini Power type package, allowing downsizing of the equipment1.50.1and automatic insertion through the tape packing and

2SB1440 -2 A, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Low collector-emitter saturation voltage VCE(sat) For low-frequency output amplification B 1 C 2 Complements to 2SD2185 E 3AECPACKAGE INFORMATION Package MPQ LeaderSize B D

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1440 TRANSISTOR (PNP) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 For low-frequency output amplification 2 Complementary to 2SD2185 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para meter V

2SB1 440TRANSISTOR(PNP)SOT-89 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 For low-frequency output amplification 2 Complementary to 2SD2185 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Bas

2SB1440 SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.62 1.81.41.43. EMITTER 3 2.64.25Features2.43.75 0.8 Low collector-emitter saturation voltage VCE(sat) MIN0.53 0.40For low-frequency output amplification 0.480.442x)0.13 B0.35 0.371.5 Complementary to 2SD2185 3.0MAXIMUM RATINGS (TA=25 unless otherwise noted)

FM120-M WILLAS2SB1440THRUSOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.TRANSISTOR (PNP) SOD-123H Low profile surface mounted application

SMD Type TransistorsPNP Transistors2SB1440SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-50V Complementary to 2SD21850.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO