2SB1453 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1453
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5 MHz
Capacitancia de salida (Cc): 80 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de transistor bipolar 2SB1453
Principales características: 2SB1453
2sb1453.pdf
DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING (UNIT mm) the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density
2sb1455.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1455 DESCRIPTION With TO-220F package Complement to type 2SD2203 Low collector saturation voltage Large current capacity APPLICATIONS High current power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Base Absolute maximum ratings
2sb1455.pdf
isc Silicon PNP Power Transistor 2SB1455 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.5V(Max)@ (I = -4A, I = -0.4A) CE(sat) C B Complement to Type 2SD2203 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-current switching applications. AB
Otros transistores... 2SB1066M , 2SB1076M , 2SB1130AM , 2SB1261-Z , 2SB1321A , 2SB1414 , 2SB1446 , 2SB1448 , 2SC5198 , 2SB1470 , 2SB1475 , 2SB1492 , 2SB1493 , 2SB1502 , 2SB1503 , 2SB1504 , 2SB1509 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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