2SB1470 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SB1470Silicon PNP triple diffusion planar type darlingtonUnit: mm20.00.5 5.00.3For power amplification(3.0)Complementary to 2SD2222 3.30.2 Features Optimum for 120 W HiFi output(1.5) High forward current transfer ratio hFE(1.5) Low collector-emitter saturation voltage VCE(sat) 2.00.32.70.33.00.31.00.20.60.2

isc Silicon PNP Darlington Power Transistor 2SB1470DESCRIPTIONHigh forward current transfer ratio hFELow collector to emitter saturation voltage VCE(sat)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplificationOptimum for 120W HiFi output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

2SB1474TransistorPower Transistor (-80V, -4A)2SB1474 Features External dimensions (Units : mm)1) Darlington connection for a high hFE.2) Built-in resistor between base and emitter.5.5 1.53) Built-in damper doide.0.9C0.5 Absolute maximum ratings (Ta=25C) 0.8Min.(1) Base(Gate)1.52.5 (2) Collector(Drain)ROHM : CPT39.5Parameter Symbol Limits Unit (3) Emitter(Sour

Transistor2SB1473Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to2SD22252.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.Satisfactory linearity of forward current transfer ratio hFE.0.65 max.High transition frequency fT.Allowing supply with the radial taping.+0.1 0.45

SMD Type TransistorsPNP Transistors2SB1475 Features Super Miniature Package Low collector-emitter saturation voltage High DC Current1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -16 V Emitter - Base Voltage VEBO -6 Collector Current - Co

isc Silicon PNP Power Transistor 2SB1477DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2236Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon PNP Darlington Power Transistor 2SB1478DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -2AFE CLow Collector Saturation Voltage-: V = -2.0V(Max.) @I = 5ACE(sat) CComplement to Type 2SD2237Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power linear and switching applications.ABSOLUTE MA