2SB1504 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SB1504Silicon PNP epitaxial planar type darlingtonUnit: mm7.50.2 4.50.2For power switching High forward current transfer ratio hFE High-speed switching0.650.1 0.850.1 Allowing automatic insertion with radial taping 0.8 C 0.8 C1.00.10.70.1 Absolute Maximum Ratings Ta = 25C0.70.11.150.21.150.2Parameter Symbol Rating

Ordering number:EN3715PNP/NPN Epitaxial Planar Silicon Transistors2SB1509/2SD2282High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2039AFeatures [2SB1509/2SD2282] Low collector-to-emitter saturation voltage :VCE(sat)=0.5V max. Wide ASO and highly registant to breakdown. Micaless package

Power Transistors2SB1502Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mm 3.3 0.220.0 0.5 5.0 0.3Complementary to 2SD22753.0FeaturesOptimum for 55W HiFi outputHigh foward current transfer ratio hFE: 5000 to 300001.5Low collector to emitter saturation voltage VCE(sat):

Power Transistors2SB1503Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mm 3.3 0.220.0 0.5 5.0 0.3Complementary to 2SD22763.0FeaturesOptimum for 110W HiFi outputHigh foward current transfer ratio hFE: 5000 to 300001.5Low collector to emitter saturation voltage VCE(sat):

JMnic Product Specification Silicon PNP Power Transistors 2SB1508 DESCRIPTION With TO-3PML package Low collector saturation voltage Complement to type 2SD2281 Wide area of safe operation APPLICATIONS For use in relay drivers ,high-speed Inverters,converters PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 Emitter

isc Silicon PNP Darlington Power Transistor 2SB1502DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -4AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -4ACE(sat) CComplement to Type 2SD2275Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsOptimum for 55W HiFi o

isc Silicon PNP Power Transistor 2SB1507DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -4ACE(sat) CGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD2280Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inverters,converters.ABSOLUTE MAXIMUM

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1509 DESCRIPTION Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -8A Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SD2282 APPLICATIONS Designed for relay drivers,high-speed inverters,converters. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARA

isc Silicon PNP Darlington Power Transistor 2SB1503DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -7AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -7ACE(sat) CComplement to Type 2SD2276Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsOptimum for 110W HiFi

isc Silicon PNP Power Transistor 2SB1508DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -6ACE(sat) CGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD2281Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inverters,converters.ABSOLUTE MAXIMUM