2SB1629 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1629
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30 MHz
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: TO-220E
Búsqueda de reemplazo de transistor bipolar 2SB1629
2SB1629 Datasheet (PDF)
2sb1629.pdf
Power Transistors 2SB1629 Silicon PNP epitaxial planar type For power amplification Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 2.6 0.1 1.2 0.15 1.45 0.15
2sb1628.pdf
DATA SHEET SILICON TRANSISTOR 2SB1628 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1628 features high current capacity in small dimension PACKAGE DRAWING (UNIT mm) and is ideal for DC/DC converters and mortor drivers. FEATURES High current capacitance Low collector saturation voltage QUALITY GRADES Standard Please re
2sb1623.pdf
Power Transistors 2SB1623 Silicon PNP epitaxial planar type For power amplification Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package > 5 kV 1.4 0.2 2.6 0.1 1.6 0.2 Absolute Maximum Ratings Ta = 25 C 0.8
2sb1623a.pdf
Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package > 5 kV Absolute Maximum Ratings Ta = 25 C 1.4 0.2 2.6 0.1 1.6 0.2 Pa
Otros transistores... 2SB1592 , 2SC5617 , 2SB1593 , 2SB1599 , 2SB1602 , 2SB1612 , 2SB1623 , 2SB1623A , B647 , 2SB1631 , 2SB1638 , 2SB1638A , 2SB1643 , 2SB1645 , 2SB1653 , 2SB1667 , 2SB1678 .
History: TR01042 | DRA3114T | TP5910 | 3DD13005MD-O-HF-N-B | TIPL791 | TP5855
History: TR01042 | DRA3114T | TP5910 | 3DD13005MD-O-HF-N-B | TIPL791 | TP5855
Liste
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