2SC5615 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE Small transistor outline +0.1 +0.1 0.5 0.05 0.15 0.05 0.3 1.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height 1 2 Flat lead style for better RF performance 0.35 HIGH GAIN BANDWIDTH PRODUCT +0.1 +0.1

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES 1005 package employed (1.0 0.5 0.5 mm) NF = 1.4 dB TYP., S21e 2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5615 50 pcs (Non reel) 8 mm wide embossed taping 2SC561

2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit mm High Voltage VCBO = 2000 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t = 0.15 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 2000 V Collector-Emitter Voltage VCEO 90

Ordering number ENN6367 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2022/2SC5610 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2041A Features [2SA2022/2SC5610] 4.5 Adoption of MBIT processes. 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter saturation voltage. High-

Ordering number ENN6336 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2023/2SC5611 60V / 5A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2165 Inverters, converters (strobes, flash, fluorescent lamp [2SA2023/2SC5611] lighting circuit). 8.0 4.0 Power amplifier (high-power car stereo,

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5618 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5618 50 pcs (Non reel) 8 mm wide embosse

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5617 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz S21e 2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5617 50 pcs (Non reel) 8 mm w

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5614 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES NF = 1.4 dB TYP., S21e 2 = 10.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5614 50 pcs (Non reel) 8 mm wide embossed taping 2SC5614-T3 10 kpcs

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE Small transistor outline +0.1 +0.1 0.5 0.05 0.15 0.05 0.3 1.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height 1 2 Flat lead style for better RF performance 0.35 HIGH GAIN BANDWIDTH PRODUCT +0.1 +0.1

2SC5619 NPN 2SC5619 NPN 2.5 T 1.5 0.5 0.5