2SC5615 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE681M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1+0.10.50.050.150.05 0.31.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height12 Flat lead style for better RF performance0.35 HIGH GAIN BANDWIDTH PRODUCT:+0.1+0.1

DATA SHEETNPN SILICON RF TRANSISTOR2SC5615NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES 1005 package employed (1.0 0.5 0.5 mm) NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHzORDERING INFORMATIONPart Number Quantity Supplying Form2SC5615 50 pcs (Non reel) 8 mm wide embossed taping2SC561

2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 2000 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 2000 VCollector-Emitter Voltage VCEO 90

Ordering number:ENN6367PNP/NPN Epitaxial Planar Silicon Transistors2SA2022/2SC5610DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2041AFeatures [2SA2022/2SC5610]4.5 Adoption of MBIT processes.10.02.8 Large current capacitance.3.2 Low collector-to-emitter saturation voltage. High-

Ordering number:ENN6336PNP/NPN Epitaxial Planar Silicon Transistors2SA2023/2SC561160V / 5A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2165 Inverters, converters (strobes, flash, fluorescent lamp[2SA2023/2SC5611]lighting circuit).8.04.0 Power amplifier (high-power car stereo,

DATA SHEETNPN SILICON RF TRANSISTOR2SC5618NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz 3-pin lead-less minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5618 50 pcs (Non reel) 8 mm wide embosse

DATA SHEETNPN SILICON RF TRANSISTOR2SC5617NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz S21e2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz 3-pin lead-less minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5617 50 pcs (Non reel) 8 mm w

DATA SHEETNPN SILICON RF TRANSISTOR2SC5614NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES NF = 1.4 dB TYP., S21e2 = 10.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz 3-pin lead-less minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5614 50 pcs (Non reel) 8 mm wide embossed taping2SC5614-T3 10 kpcs

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE688M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1+0.10.50.050.150.05 0.31.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height12 Flat lead style for better RF performance0.35 HIGH GAIN BANDWIDTH PRODUCT:+0.1+0.1

PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE856M13OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1+0.10.50.051.0 X 0.5 X 0.5 mm 0.150.05 0.3 Low profile / 0.50 mm package height12 Flat lead style for better RF performance0.35 LOW NOISE FIGURE:+0.1+0.11.0 0.7

2SC5619 NPN 2SC5619NPN 2.5T 1.5 0.5 0.5