2SB1734 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistors 2SB1734 Silicon PNP epitaxial planar type For general amplification Unit mm Complementary to 2SD2706 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing. (0.95) (0.95) 1.9 0.1 Absolute Maximum Ratings Ta =

2SB1733 Transistors General purpose amplification (-30V, -1A) 2SB1733 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) max. -350mV at Ic = -500mA / IB = -25mA ROHM TUMT3 Abbreviated symbol EW (1) Base (2) Emitter (3) Collector Packaging specification

2SB1731 Transistors Low frequency amplifier 2SB1731 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) -370mV at IC =-1A / IB =-50mA ROHM TUMT3 Abbreviated symbol FL (1)Base (2)Emitter (3)Collector Packaging specifications Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Un

2SB1730 Transistors General purpose amplification(-12V, -2A) 2SB1730 Applications Dimensions (Unit mm) Low frequency amplifier Deiver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -180mV at IC= -1A / IB= -50mA ROHM TUMT3 Abbreviated symbol FV (1) Base Packaging specifications (2) Emitter (3) Collector Packag

2SB1732 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1732 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -200mV ROHM TUMT3 Abbreviated symbol EV (1)Base at IC = -500mA / IB = -25mA (2)Emitter (3)Collector Packaging specifications