2SD1536M Todos los transistores

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2SD1536M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1536M

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz

Capacitancia de salida (Cc): 11 pF

Ganancia de corriente contínua (hfe): 1000

Empaquetado / Estuche: ATR

Búsqueda de reemplazo de transistor bipolar 2SD1536M

 

2SD1536M Datasheet (PDF)

1.1. 2sd1536m.pdf Size:48K _rohm

2SD1536M

4.1. 2sd1538.pdf Size:57K _panasonic

2SD1536M
2SD1536M

Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type Unit: mm 8.5 0.2 3.4 0.3 For low-voltage switching 6.0 0.5 1.0 0.1 Complementary to 2SB1070 and 2SB1070A Features Low collector to emitter saturation voltage VCE(sat) 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circuit boar

4.2. 2sd1535.pdf Size:65K _panasonic

2SD1536M
2SD1536M

Power Transistors 2SD1535 Silicon NPN triple diffusion planar type Darlington For high power amplification Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Extremely satisfactory linearity of the forward current transfer ? 3.1 0.1 ratio hFE High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with 1.3

4.3. 2sd1539.pdf Size:54K _panasonic

2SD1536M
2SD1536M

Power Transistors 2SD1539, 2SD1539A Silicon NPN epitaxial planar type For low-voltage switching Unit: mm Complementary to 2SB1071 and 2SB1071A 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching ? 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratings (TC=25?C)

4.4. 2sd1531.pdf Size:266K _inchange_semiconductor

2SD1536M
2SD1536M

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1531 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage APPLICATIONS ·Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V

4.5. 2sd1535.pdf Size:73K _inchange_semiconductor

2SD1536M
2SD1536M

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1535 DESCRIPTION ·With TO-220Fa package ·Wide area of safe operation ·High breakdown voltage ·DARLINGTON APPLICATIONS ·For high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL P

4.6. 2sd1530.pdf Size:273K _inchange_semiconductor

2SD1536M
2SD1536M

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1530 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching APPLICATIONS ·Designed for power amplifier,power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=2

Otros transistores... 2SC6093LS , 2SB1714 , 2SB1722J , 2SB1734 , 2SB792A , 2SB910M , 2SD1341P , 2SD1381F , 2SC5200 , 2SD1775 , 2SD1775A , 2SD2033A , 2SD2091 , 2SD2096 , 2SD2164 , 2SD2165 , 2SD2166 .

 


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