2N63 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N63
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.12 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 22 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 0.1 MHz
Ganancia de corriente contínua (hFE): 22
Encapsulados: TO22
Búsqueda de reemplazo de 2N63
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2N63 datasheet
2n6338 2n6339 2n6340 2n6341.pdf
Order this document MOTOROLA by 2N6338/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon 2N6338 Transistors 2N6339 . . . designed for use in industrial military power amplifier and switching circuit 2N6340 applications. High Collector Emitter Sustaining Voltage 2N6341* VCEO(sus) = 100 Vdc (Min) 2N6338 VCEO(sus) = 120 Vdc (Min) 2N6339 *Motorola Preferred De
2n6342-49 2n6342 2n6343 2n6344 2n6345 2n6346 2n6347 2n6348 2n6349.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6342/D 2N6342 Triacs thru Silicon Bidirectional Triode Thyristors 2N6349 . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch fro
2n6346a 2n6347a 2n6348a 2n6349a.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6346A/D Triacs 2N6346A Silicon Bidirectional Triode Thyristors thru . . . designed primarily for full-wave ac control applications, such as light dimmers, 2N6349A motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch
2n6379re.pdf
Order this document MOTOROLA by 2N6379/D SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon *Motorola Preferred Device Transistors 50 AMPERE POWER TRANSISTORS . . . designed for use in industrial military power amplifier and switching circuit PNP SILICON applications. 80, 100, 120 VOLTS High Collector Emitter Sustaining Voltage 250 WATTS VCEO(sus) = 120 Vdc (M
2n6387 2n6388.pdf
Order this document MOTOROLA by 2N6387/D SEMICONDUCTOR TECHNICAL DATA 2N6387 Plastic Medium-Power 2N6388* Silicon Transistors *Motorola Preferred Device . . . designed for general purpose amplifier and low speed switching applications. DARLINGTON High DC Current Gain 8 AND 10 AMPERE hFE = 2500 (Typ) @ IC = 4.0 Adc NPN SILICON Collector Emitter Sustaining Voltage
2n6388.pdf
2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power 3 2 transistor in monolithic Darlington configuration 1 mounted in Jedec TO-220 plastic package. It is inteded for use in low and mediu
2n5954 2n5955 2n5956 2n6372 2n6373 2n6374.pdf
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com
2n6383 2n6384 2n6385.pdf
TM 2N6383 Central 2N6384 Semiconductor Corp. 2N6385 NPN SILICON POWER DESCRIPTION DARLINGTON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS (TC=25 C) SYMBOL 2N6383 2N6384 2N6385 UNITS Collector-Base Voltage VCBO 40 60 80 V Coll
2n6306 2n6307 2n6308.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
2n6338 2n6341.pdf
2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial-military power amplifier and switching circuit applications. High Collector-Emitter Sustaining Voltage - http //onsemi.com VCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N6341 25 AMPERE High DC Current Gain - hFE = 30 - 120 @ IC = 10 Adc POWER TRANSISTORS = 12 (Min) @ IC = 25 Adc
2n6253-2n6254-2n6371.pdf
2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions. These devices differ in maximum ratings for voltage and power dissipation. All are suppli
2n6306 2n6308.pdf
The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall MIL-PRF-19500/498E be completed by 12 August 20005. 12 May 2005 SUPERSEDING MIL-PRF-19500/498D 30 April 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6306, 2N6306T1, 2N6306T3, 2N6308, 2N6308T1, 2N6308T3, JAN, J
2n6338x.pdf
2N6338X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6340x.pdf
2N6340X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 140V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6299smd05 2n6299smd 2n6301smd 2n6301smd05.pdf
2N6299SMD 2N6299SMD05 2N6301SMD 2N6301SMD05 MECHANICAL DATA Dimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR 2N6301SMD - NPN TRANSISTOR Designed for general
2n6339acecc.pdf
2N6339ACECC Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 120V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processe
2n6341x.pdf
2N6341X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 150V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6302.pdf
2N6302 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 120V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 16A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6301smd05.pdf
2N6299SMD 2N6299SMD05 2N6301SMD 2N6301SMD05 MECHANICAL DATA Dimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR 2N6301SMD - NPN TRANSISTOR Designed for general
2n6385smd05.pdf
2N6385SMD05 MECHANICAL DATA Dimensions in mm (inches) SILICON POWER NPN DARLINGTON TRANSISTOR 7.54 (0.296) 0.76 (0.030) min. FEATURES 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005) High Gain Darlington Performance 1 3 2 APPLICATIONS Audio Amplifiers Hammer Drivers 0.127 (0.005) Shunt and Series Regulators 16 PLCS 0.127 (0.005) 0.50(0.020)
2n6312 2n6313 2n6314 2n4231a 2n4232a 2n4233a.pdf
A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com
2n6387 8.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N6387 NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS 2N6388 TO-220 Plastic Package Designed for General Purpose Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N6387 2N6388 UNIT VCEO Collector Emitter Voltage 60 80 V VCBO Collector Base Voltage
2n6338 2n6339 2n6340 2n6341.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION With TO-3 package High DC current gain Fast switching times Low collector saturation voltage Complement to type 2N6436 38 APPLICATIONS For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base
2n6383 2n6384 2n6385.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6383 2N6384 2N6385 DESCRIPTION With TO-3 package Complement to type 2N6648/6649/6650 DARLINGTON High DC current gain APPLICATIONS Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN DESCRIPTION 1 B
2n6386 2n6387 2n6388.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6386 2N6387 2N6388 DESCRIPTION With TO-220C package Complement to type 2N6666/6667/6668 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to
2n6359.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6359 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION 1 Base 2 Emit
2n6371.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION With TO-3 package Low collector saturation voltage High dissipation capability Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power-switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and s
2n6357.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6357 DESCRIPTION With TO-3 package High DC current gain DARLINGTON APPLICATIONS For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CON
2n6360.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION 1 Base 2 Emit
2n6326 2n6327 2n6328.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(
2n6372 2n6373 2n6374.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6372 2N6373 2N6374 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for switching and wide-band amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ra
2n6358.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6358 DESCRIPTION With TO-3 package High DC current gain DARLINGTON APPLICATIONS For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CON
2n6354.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6354 DESCRIPTION With TO-3 package Excellent safe operating area Fast switching speed Low collector saturation voltage High power dissipation APPLICATIONS For switching applications in military and industrial equipment PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and
2n6355.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6355 DESCRIPTION With TO-3 package High DC current gain DARLINGTON APPLICATIONS For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CON
2n6356.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6356 DESCRIPTION With TO-3 package High DC current gain DARLINGTON APPLICATIONS For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CON
2n6306 2n6308.pdf
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices Qualified Level JAN 2N6306 2N6308 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6306 2N6308 Units Collector-Emitter Voltage 250 350 Vdc VCEO Collector-Base Voltage 500 700 Vdc VCBO Emitter-Base Voltage 8.0 Vdc VEBO Collector Current 8.0 Adc IC Base Current 4.0 Adc IB Total P
2n6350-53.pdf
TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 Devices Qualified Level JAN 2N6350 2N6351 2N6352 2N6353 JANTX JANTXV MAXIMUM RATINGS 2N6350 2N6351 Ratings Symbol Units 2N6352 2N6353 Collector-Emitter Voltage 80 150 Vdc VCER Collector-Base Voltage 80 150 Vdc VCBO 12 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Base Current I 0.5
2n6303.pdf
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 FAX (561) 845-7813 2N6303 APPLICATIONS High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES Silicon PNP Power Collector-Emitter Sustaining Voltage VCEO(sus) = - 80 Vdc (Min) Transistors DC Current Gain hFE = 30-150 @ IC = 1.5 Adc Low Collector-
2n6304.pdf
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE (215) 631-9840 FAX (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min) @ IC = 10 mAdc 2 1. Emitter 2. Base 1 3 Maximum Available Gain = 14 dB (min) @ f
h2n6388.pdf
Spec. No. HE6714 HI-SINCERITY Issued Date 1992.12.15 Revised Date 2004.11.03 MICROELECTRONICS CORP. Page No. 1/4 H2N6388 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6388 is designed for general-purpose amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ........................................
2n6300 2n6301.pdf
NPN Darlington Power Silicon Transistor 2N6300 & 2N6301 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/539 TO-66 (TO-213AA) Package Maximum Ratings Ratings Symbol 2N6300 2N6301 Units Collector - Emitter Voltage VCEO 60 80 Vdc Collector - Base Voltage VCBO 60 80 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Base Current IB 120 mAdc Collector Current IC 8.0 Adc Tot
2n6338 2n6339 2n6340 2n6341.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N6338/6339/6340/6341 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min)- 2N6338 CEO(SUS) = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 High Switching Speed Low Saturation Voltage- V )= 1.0V(Max)@ I = 10A CE(sat C APPLICATIONS Designed for use in industrial-military power ampli
2n6312 2n6313 2n6314.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6312 2N6313 2N6314 DESCRIPTION With TO-66 package Low collector saturation voltage Low leakage current APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector A
2n6338 2n6339 2n6340 2n6341.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6338/6339/6340/6341 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 High Switching Speed Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS Designed for use in industr
2n6315 2n6316.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6315 2N6316 DESCRIPTION With TO-66 package Low collector saturation voltage Complement to type 2N6317/6318 APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collect
2n6322.pdf
isc Silicon NPN Power Transistor 2N6322 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
2n6307.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6307 DESCRIPTION With TO-3 package High breakdown voltage High power dissipation APPLICATIONS Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplif
2n6383 2n6384 2n6385.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6383 2N6384 2N6385 DESCRIPTION With TO-3 package Complement to type 2N6648/6649/6650 DARLINGTON High DC current gain APPLICATIONS Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN
2n6330.pdf
isc Silicon PNP Power Transistor 2N6330 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-80V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -8
2n6386 2n6387 2n6388.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6386 2N6387 2N6388 DESCRIPTION With TO-220C package Complement to type 2N6666/6667/6668 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Base Collecto
2n6359.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6359 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION
2n6317 2n6318.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6317 2N6318 DESCRIPTION With TO-66 package Low collector saturation voltage Complement to type 2N6315/6316 APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collecto
2n6308.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6308 DESCRIPTION With TO-3 package High breakdown voltage High power dissipation APPLICATIONS Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplif
2n6371.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION With TO-3 package Low collector saturation voltage High dissipation capability Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power-switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified out
2n6357.pdf
isc Silicon NPN Darlington Power Transistor 2N6357 DESCRIPTION High DC current gain h = 500(Min)@ I = 4A FE C With TO-3 package Low collector saturation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and low -frequency swithing applications. ABSOLUTE MAX
2n6360.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION
2n6300 2n6301.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6300 2N6301 DESCRIPTION With TO-66 package DARLINGTON Low collector saturation voltage Complement to type 2N6298/6299 APPLICATIONS General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (T
2n6326 2n6327 2n6328.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute
2n6378.pdf
isc Silicon PNP Power Transistor 2N6378 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-100V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -120 V CBO V Collector-Emitter Voltage
2n6329.pdf
isc Silicon PNP Power Transistor 2N6329 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-60V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -6
2n6331.pdf
isc Silicon PNP Power Transistor 2N6331 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-100V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -100 V CBO V Collector-Emitter Voltage
2n6372 2n6373 2n6374.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6372 2N6373 2N6374 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for switching and wide-band amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Ab
2n6388.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6388 DESCRIPTION With TO-220 package High current capability DARLINGTON APPLICATIONS Intended for use in low and medium frequency power applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMET
2n6358.pdf
isc Silicon NPN Darlington Power Transistor 2N6358 DESCRIPTION High DC current gain h = 1500(Min)@ I = 4A FE C With TO-3 package Low collector saturation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and low -frequency swithing applications. ABSOLUTE MA
2n6302.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6302 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain @IC=8A APPLICATIONS Designed for use in high power audio amplifier applications and high voltage switching regulator circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified
2n6354.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6354 DESCRIPTION With TO-3 package Excellent safe operating area Fast switching speed Low collector saturation voltage High power dissipation APPLICATIONS For switching applications in military and industrial equipment PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified ou
2n6355.pdf
isc Silicon NPN Darlington Power Transistor 2N6355 DESCRIPTION High DC current gain h = 500(Min)@ I = 4A FE C With TO-3 package Low collector saturation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and low -frequency swithing applications. ABSOLUTE MAX
2n6356.pdf
isc Silicon NPN Darlington Power Transistor 2N6356 DESCRIPTION High DC current gain h = 1500(Min)@ I = 4A FE C With TO-3 package Low collector saturation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and low -frequency swithing applications. ABSOLUTE MA
2n6377.pdf
isc Silicon PNP Power Transistor 2N6377 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-80V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -100 V CBO V Collector-Emitter Voltage -
2n6306.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6306 DESCRIPTION With TO-3 package High breakdown voltage High power dissipation APPLICATIONS Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplif
Otros transistores... 2N6292 , 2N6293 , 2N6294 , 2N6295 , 2N6296 , 2N6297 , 2N6298 , 2N6299 , 2SD669A , 2N630 , 2N6300 , 2N6301 , 2N6302 , 2N6303 , 2N6304 , 2N6305 , 2N6306 .
History: 2N6293 | 2N6295
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Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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