Справочник транзисторов. 2N63

 

Биполярный транзистор 2N63 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2N63

Тип материала: Ge

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.12 W

Макcимально допустимое напряжение коллектор-база (Ucb): 25 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 22 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V

Макcимальный постоянный ток коллектора (Ic): 0.01 A

Предельная температура PN-перехода (Tj): 85 °C

Граничная частота коэффициента передачи тока (ft): 0.1 MHz

Статический коэффициент передачи тока (hfe): 22

Корпус транзистора: TO22

Аналоги (замена) для 2N63

 

 

2N63 Datasheet (PDF)

1.1. 2n6338x.pdf Size:11K _update

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2N6338X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

1.2. 2n6306 2n6308.pdf Size:278K _update

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The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall MIL-PRF-19500/498E be completed by 12 August 20005. 12 May 2005 SUPERSEDING MIL-PRF-19500/498D 30 April 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6306, 2N6306T1, 2N6306T3, 2N6308, 2N6308T1, 2N6308T3, JAN, J

 1.3. 2n6385smd05.pdf Size:19K _update

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2N6385SMD05 MECHANICAL DATA Dimensions in mm (inches) SILICON POWER NPN DARLINGTON TRANSISTOR 7.54 (0.296) 0.76 (0.030) min. FEATURES 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005) • High Gain Darlington Performance 1 3 2 APPLICATIONS • Audio Amplifiers • Hammer Drivers 0.127 (0.005) • Shunt and Series Regulators 16 PLCS 0.127 (0.005) 0.50(0.020)

1.4. 2n6341x.pdf Size:10K _update

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2N6341X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 150V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 1.5. 2n6340x.pdf Size:11K _update

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2N6340X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 140V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

1.6. 2n6339acecc.pdf Size:11K _update

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2N6339ACECC Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 120V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processe

1.7. 2n6301smd.pdf Size:25K _upd

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2N6299SMD 2N6299SMD05 2N6301SMD 2N6301SMD05 MECHANICAL DATA Dimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR 2N6301SMD - NPN TRANSISTOR Designed for general

1.8. 2n6301smd05.pdf Size:25K _upd

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2N6299SMD 2N6299SMD05 2N6301SMD 2N6301SMD05 MECHANICAL DATA Dimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR 2N6301SMD - NPN TRANSISTOR Designed for general

1.9. 2n6301smd 2n6301smd05.pdf Size:25K _upd

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2N6299SMD 2N6299SMD05 2N6301SMD 2N6301SMD05 MECHANICAL DATA Dimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR 2N6301SMD - NPN TRANSISTOR Designed for general

1.10. 2n6379re.pdf Size:171K _motorola

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Order this document MOTOROLA by 2N6379/D SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon *Motorola Preferred Device Transistors 50 AMPERE POWER TRANSISTORS . . . designed for use in industrialmilitary power amplifier and switching circuit PNP SILICON applications. 80, 100, 120 VOLTS High Collector Emitter Sustaining Voltage 250 WATTS VCEO(sus) = 120 Vdc (Min) 2N6

1.11. 2n6342 2n6343 2n6344 2n6345 2n6346 2n6347 2n6348 2n6349.pdf Size:114K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6342/D 2N6342 Triacs thru Silicon Bidirectional Triode Thyristors 2N6349 . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a

1.12. 2n6342-49.pdf Size:114K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6342/D 2N6342 Triacs thru Silicon Bidirectional Triode Thyristors 2N6349 . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a

1.13. 2n6346a 2n6347a 2n6348a 2n6349a.pdf Size:114K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6346A/D Triacs 2N6346A Silicon Bidirectional Triode Thyristors thru . . . designed primarily for full-wave ac control applications, such as light dimmers, 2N6349A motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch fro

1.14. 2n6387 2n6388.pdf Size:164K _motorola

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Order this document MOTOROLA by 2N6387/D SEMICONDUCTOR TECHNICAL DATA 2N6387 Plastic Medium-Power 2N6388* Silicon Transistors *Motorola Preferred Device . . . designed for generalpurpose amplifier and lowspeed switching applications. DARLINGTON High DC Current Gain 8 AND 10 AMPERE hFE = 2500 (Typ) @ IC = 4.0 Adc NPN SILICON CollectorEmitter Sustaining Voltage @ 100 mAdc

1.15. 2n6338 2n6339 2n6340 2n6341.pdf Size:155K _motorola

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Order this document MOTOROLA by 2N6338/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon 2N6338 Transistors 2N6339 . . . designed for use in industrialmilitary power amplifier and switching circuit 2N6340 applications. High CollectorEmitter Sustaining Voltage 2N6341* VCEO(sus) = 100 Vdc (Min) 2N6338 VCEO(sus) = 120 Vdc (Min) 2N6339 *Motorola Preferred Device VCEO(sus)

1.16. 2n6388.pdf Size:109K _st

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2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power 3 2 transistor in monolithic Darlington configuration 1 mounted in Jedec TO-220 plastic package. It is inteded for use in low and medium fr

1.17. 2n6383 2n6384 2n6385.pdf Size:205K _central

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TM 2N6383 Central 2N6384 Semiconductor Corp. 2N6385 NPN SILICON POWER DESCRIPTION: DARLINGTON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25C) SYMBOL 2N6383 2N6384 2N6385 UNITS Collector-Base Voltage VCBO 40 60 80 V Collecto

1.18. 2n5954 2n5955 2n5956 2n6372 2n6373 2n6374.pdf Size:114K _central

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TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

1.19. 2n6306 2n6307 2n6308.pdf Size:62K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.20. 2n6338 2n6341.pdf Size:135K _onsemi

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ON Semiconductort High-Power NPN Silicon 2N6338 Transistors 2N6341* . . . designed for use in industrial-military power amplifier and switching circuit applications. High Collector-Emitter Sustaining Voltage - *ON Semiconductor Preferred Device VCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N6341 25 AMPERE High DC Current Gain - POWER TRANSISTORS NPN SILICON hFE = 30 - 1

1.21. 2n6253-2n6254-2n6371.pdf Size:202K _comset

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2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions. These devices differ in maximum ratings for voltage and power dissipation. All are supplied

1.22. 2n6386-88.pdf Size:160K _mospec

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A A A

1.23. 2n6315-18.pdf Size:165K _mospec

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A A A A

1.24. 2n6298-99 2n6300-01.pdf Size:177K _mospec

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A A A A

1.25. 2n6383-85 2n6648-49 2n6650.pdf Size:146K _mospec

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A A A

1.26. 2n6338 2n6339 2n6340 2n6341.pdf Size:128K _mospec

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A A A

1.27. 2n6302.pdf Size:11K _semelab

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2N6302 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 120V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 16A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

1.28. rt2n63m.pdf Size:136K _isahaya

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1.29. 2n6312 2n6313 2n6314 2n4231a 2n4232a 2n4233a.pdf Size:196K _bocasemi

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A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com

1.30. 2n6387 8.pdf Size:87K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N6387 NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS 2N6388 TO-220 Plastic Package Designed for General Purpose Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N6387 2N6388 UNIT VCEO Collector Emitter Voltage 60 80 V VCBO Collector Base Voltage 60

1.31. 2n6357.pdf Size:149K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2N6357 DESCRIPTION ·With TO-3 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIO

1.32. 2n6354.pdf Size:149K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2N6354 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Fast switching speed ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·For switching applications in military and industrial equipment PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and sym

1.33. 2n6372 2n6373 2n6374.pdf Size:151K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2N6372 2N6373 2N6374 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for switching and wide-band amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratin

1.34. 2n6383 2n6384 2n6385.pdf Size:153K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2N6383 2N6384 2N6385 DESCRIPTION ·With TO-3 package ·Complement to type 2N6648/6649/6650 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN DESCRIPTION 1 Base

1.35. 2n6355.pdf Size:147K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2N6355 DESCRIPTION ·With TO-3 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIO

1.36. 2n6360.pdf Size:148K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain ·Excellent safe operating area APPLICATIONS ·Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION 1 Base 2 Emitter

1.37. 2n6356.pdf Size:147K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2N6356 DESCRIPTION ·With TO-3 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIO

1.38. 2n6371.pdf Size:148K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High dissipation capability ·Excellent safe operating area APPLICATIONS ·Series and shunt regulators ·High-fidelity amplifiers ·Power-switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symb

1.39. 2n6326 2n6327 2n6328.pdf Size:150K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=

1.40. 2n6338 2n6339 2n6340 2n6341.pdf Size:154K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION ·With TO-3 package ·High DC current gain ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2

1.41. 2n6386 2n6387 2n6388.pdf Size:158K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2N6386 2N6387 2N6388 DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2

1.42. 2n6359.pdf Size:148K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2N6359 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain ·Excellent safe operating area APPLICATIONS ·Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION 1 Base 2 Emitter

1.43. 2n6358.pdf Size:149K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2N6358 DESCRIPTION ·With TO-3 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIO

1.44. 2n6328.pdf Size:22K _microsemi

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1.45. 2n6304.pdf Size:86K _microsemi

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min) @ IC = 10 mAdc 2 1. Emitter 2. Base 1 3 Maximum Available Gain = 14 dB (min) @ f = 500 MHz

1.46. 2n6303.pdf Size:56K _microsemi

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7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N6303 APPLICATIONS: High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: Silicon PNP Power Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min) Transistors DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc Low Collector-Emitter Saturat

1.47. 2n6306 2n6308.pdf Size:54K _microsemi

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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices Qualified Level JAN 2N6306 2N6308 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6306 2N6308 Units Collector-Emitter Voltage 250 350 Vdc VCEO Collector-Base Voltage 500 700 Vdc VCBO Emitter-Base Voltage 8.0 Vdc VEBO Collector Current 8.0 Adc IC Base Current 4.0 Adc IB Total Powe

1.48. 2n6350-53.pdf Size:55K _microsemi

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TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 Devices Qualified Level JAN 2N6350 2N6351 2N6352 2N6353 JANTX JANTXV MAXIMUM RATINGS 2N6350 2N6351 Ratings Symbol Units 2N6352 2N6353 Collector-Emitter Voltage 80 150 Vdc VCER Collector-Base Voltage 80 150 Vdc VCBO 12 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Base Current I 0.5 Ad

1.49. 2n6329.pdf Size:21K _microsemi

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1.50. 2n6302.pdf Size:130K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6302 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain @IC=8A APPLICATIONS ·Designed for use in high power audio amplifier applications and high voltage switching regulator circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified out

1.51. 2n6357.pdf Size:118K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ High DC current gain Ў¤ DARLINGTON APPLICATIONS Ў¤ For general-purpose amplifier and low-frequency switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6357 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=Ўж ) SYM

1.52. 2n6354.pdf Size:117K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Excellent safe operating area Ў¤ Fast switching speed Ў¤ Low collector saturation voltage Ў¤ High power dissipation APPLICATIONS Ў¤ For switching applications in military and industrial equipment PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6354 Absolut

1.53. 2n6372 2n6373 2n6374.pdf Size:118K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ Low collector saturation voltage Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for switching and wide-band amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6372 2N6373 2N6374 Fig.1 simplified outline (TO-66) and symbol Abs

1.54. 2n6312 2n6313 2n6314.pdf Size:131K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6312 2N6313 2N6314 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Abso

1.55. 2n6383 2n6384 2n6385.pdf Size:118K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N6648/6649/6650 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators Ў¤ PINNING PIN 1 2 3 Base Emitter Collect

1.56. 2n6338 6339 6340 6341.pdf Size:185K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6338/6339/6340/6341 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 ·High Switching Speed ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS ·Designed for use in industrial

1.57. 2n6306.pdf Size:128K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6306 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified

1.58. 2n6355.pdf Size:116K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ High DC current gain Ў¤ DARLINGTON APPLICATIONS Ў¤ For general-purpose amplifier and low-frequency switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6355 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=Ўж ) SYM

1.59. 2n6360.pdf Size:116K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Low collector saturation voltage Ў¤ High DC current gain Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN 1 2 3 Base Emitter Colle

1.60. 2n6322.pdf Size:130K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6322 DESCRIPTION ·With TO-3 package ·High current and high power capability ·Low collector saturation voltage APPLICATIONS ·For use in high current ,high power applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum rating

1.61. 2n6300 2n6301.pdf Size:131K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6300 2N6301 DESCRIPTION ·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-6

1.62. 2n6356.pdf Size:116K _inchange_semiconductor

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2N63

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ High DC current gain Ў¤ DARLINGTON APPLICATIONS Ў¤ For general-purpose amplifier and low-frequency switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6356 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=Ўж ) SYM

1.63. 2n6371.pdf Size:116K _inchange_semiconductor

2N63
2N63

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Low collector saturation voltage Ў¤ High dissipation capability Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Series and shunt regulators Ў¤ High-fidelity amplifiers Ў¤ Power-switching circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6371 Fig.

1.64. 2n6307.pdf Size:128K _inchange_semiconductor

2N63
2N63

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6307 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified

1.65. 2n6326 2n6327 2n6328.pdf Size:117K _inchange_semiconductor

2N63
2N63

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Low collector saturation voltage Ў¤ High DC current gain APPLICATIONS Ў¤ Designed for audio amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6326 2N6327 2N6328 Fig.1 simplified outline (TO-3) and symbol Absolute

1.66. 2n6308.pdf Size:128K _inchange_semiconductor

2N63
2N63

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6308 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified

1.67. 2n6315 2n6316.pdf Size:131K _inchange_semiconductor

2N63
2N63

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6315 2N6316 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6317/6318 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector

1.68. 2n6386 2n6387 2n6388.pdf Size:121K _inchange_semiconductor

2N63
2N63

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type 2N6666/6667/6668 Ў¤ DARLINGTON Ў¤ High DC current gain Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Designed for general-purpose amplifier and low speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emit

1.69. 2n6388.pdf Size:120K _inchange_semiconductor

2N63
2N63

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6388 DESCRIPTION Ў¤ With TO-220 package Ў¤ High current capability Ў¤ DARLINGTON APPLICATIONS Ў¤ Intended for use in low and medium frequency power applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEB

1.70. 2n6359.pdf Size:116K _inchange_semiconductor

2N63
2N63

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Low collector saturation voltage Ў¤ High DC current gain Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN 1 2 3 Base Emitter Colle

1.71. 2n6317 2n6318.pdf Size:131K _inchange_semiconductor

2N63
2N63

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6317 2N6318 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6315/6316 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector

1.72. 2n6358.pdf Size:118K _inchange_semiconductor

2N63
2N63

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ High DC current gain Ў¤ DARLINGTON APPLICATIONS Ў¤ For general-purpose amplifier and low-frequency switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6358 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=Ўж ) SYM

1.73. h2n6388.pdf Size:41K _hsmc

2N63
2N63

Spec. No. : HE6714 HI-SINCERITY Issued Date : 1992.12.15 Revised Date : 2004.11.03 MICROELECTRONICS CORP. Page No. : 1/4 H2N6388 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6388 is designed for general-purpose amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ...........................................

1.74. 2n6300 2n6301.pdf Size:184K _aeroflex

2N63
2N63

NPN Darlington Power Silicon Transistor 2N6300 & 2N6301 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/539 • TO-66 (TO-213AA) Package Maximum Ratings Ratings Symbol 2N6300 2N6301 Units Collector - Emitter Voltage VCEO 60 80 Vdc Collector - Base Voltage VCBO 60 80 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Base Current IB 120 mAdc Collector Current IC 8.0 Adc Tot

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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