2SD2375 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2375

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Ganancia de corriente contínua (hFE): 500

Encapsulados: TO-220D-A1

 Búsqueda de reemplazo de 2SD2375

- Selecciónⓘ de transistores por parámetros

 

2SD2375 datasheet

 ..1. Size:80K  panasonic
2sd2375.pdf pdf_icon

2SD2375

Power Transistors 2SD2375 Silicon NPN triple diffusion planar type Unit mm 4.6 0.2 For power amplification with high forward current transfer ratio 9.9 0.3 2.9 0.2 3.2 0.1 Features High forward current transfer ratio hFE which has satisfactory lin- earity Full-pack package which can be installed to the heat sink with one screw 1.4 0.2 2.6 0.1 1.6 0.2 0.8

 8.1. Size:45K  panasonic
2sd2374.pdf pdf_icon

2SD2375

Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548 and 2SB1548A Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity 4.6 0.2 9.9 0.3 Low collector to emitter saturation voltage VCE(sat) 2.9 0.2 Full-pack package which can be installed to the heat sink with one scr

 8.2. Size:115K  inchange semiconductor
2sd2374 2sd2374a.pdf pdf_icon

2SD2375

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2374 2SD2374A DESCRIPTION With TO-220F package Complement to type 2SB1548/1548A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified

 8.3. Size:199K  inchange semiconductor
2sd2374.pdf pdf_icon

2SD2375

isc Silicon NPN Power Transistor 2SD2374 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = 1.2V(Max)@ (I = 3A, I = 0.375A) CE(sat) C B Complement to Type 2SB1548 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

Otros transistores... 2SD2284, 2SD2285, 2SD2321, 2SD2324, 2SD2345, 2SD2357, 2SD2358, 2SD2359, D209L, 2SD2382, 2SD2383, 2SD2396, 2SD2403, 2SD2414, 2SD2416, 2SD2420, 2SD2423