Биполярный транзистор 2SD2375 Даташит. Аналоги
Наименование производителя: 2SD2375
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 20 MHz
Статический коэффициент передачи тока (hfe): 500
Корпус транзистора: TO-220D-A1
- подбор биполярного транзистора по параметрам
2SD2375 Datasheet (PDF)
2sd2375.pdf

Power Transistors2SD2375Silicon NPN triple diffusion planar typeUnit: mm4.60.2For power amplification with high forward current transfer ratio 9.90.32.90.2 3.20.1 Features High forward current transfer ratio hFE which has satisfactory lin-earity Full-pack package which can be installed to the heat sink with onescrew1.40.22.60.11.60.20.8
2sd2374.pdf

Power Transistors2SD2374, 2SD2374ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB1548 and 2SB1548AUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity4.6 0.2 9.9 0.3Low collector to emitter saturation voltage VCE(sat)2.9 0.2Full-pack package which can be installed to the heat sink withone scr
2sd2374 2sd2374a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2374 2SD2374A DESCRIPTION With TO-220F package Complement to type 2SB1548/1548A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified
2sd2374.pdf

isc Silicon NPN Power Transistor 2SD2374DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = 1.2V(Max)@ (I = 3A, I = 0.375A)CE(sat) C BComplement to Type 2SB1548Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SD882SQ-E | DTC115EEB
History: 2SD882SQ-E | DTC115EEB



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