2SD2396 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD2396TransistorsTransistors2SC5060(96-819-D351)(96-733-D416)323

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate TransistorsTO 220F 2SD2396 TRANSISTOR (NPN)FEATURES Available in TO-220 F package Darling connection provides high dc current gain (hFE)121. BASE3 Large collector power dissipation Low frequency and Power amplifier 2. COLLECTOR3. EMITTER Equivalent Circuit 2SD2396=D

2SD2396(BR3DA2396F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features ,,,, High DC current gain),low VCE(sat),large collector power dissipation, wide SOA. / Applications

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2396DESCRIPTIONLow Collector Saturation VoltageHigh DC current gainLarge collector power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)

2SB1566TransistorsTransistors2SD2395(94L-459-B350)(94L-1101-D350)296

2SD2391DatasheetMiddle Power Transistor (60V / 2A)lOutlinel SOT-89 Parameter Value SC-62 VCEO60VIC2AMPT3lFeatures lInner circuitl l1)Low saturation voltage, tipicallyVCE(sat)=130mV at IC/IB=1A/50mA.2)Collector-emitter voltage=60V3)PD=2W (Mounted on a ceramic board(40400.7mm) ).4)Complementary PNP Types : 2SB

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397TransistorsMedium Power Transistor(Motor, Relay drive) (6010V, 2A)2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.2) Strong protection against reverse surges due to "L"4.02SD22121.0 2.5 0.5loads.(1)3) Built-in resistor between base and emitter.(2)

2SD2394TransistorsPower Transistor (60V, 3A)2SD2394 Features External dimensions (Units : mm)1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB = 2A / 0.2A)10.0 4.53.2 2.8 2) Excellent DC current gain characteristics.3) Wide SOA (safe operating area).1.21.30.80.752.54 2.54 2.6 (1) Base(Gate)(1) (2) (3)(2) Collector(Drain)( )(1) (2) (3) (3) Emit

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2391 TRANSISTOR (NPN) SOT-89-3L FEATURES Low VCE(sat) 1.BASE 1 2 3 2.COLLECTOR Marking: DT 3.EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Vol

CEquivalent circuitBDarlington 2SD2390(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SD2390 Unit Symbol Conditions 2SD2390 Unit0.24.80.415.6VCBO 160 V ICBO VC

2SD2395(3DA2395) NPN /SILICON NPN TRANSISTOR : , Purpose: Voltage regulator, DC-DC converter and relay driver audio frequency power Amplifier. : ,, 2SB1566(3CA1566) Features: Low V ,wide SOA, complements the 2SB1566(3

ST 2SD2391U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 60 VEmitter Base Voltage VEBO 6 VCollector Current IC 2 APeak Collector Current (PW = 10 ms) ICP 6 A0.5 Ptot W Total Power Dissipation2 1) Junction Temperature Tj 150 Storage Temperatu

SMD Type TransistorsNPN Transistors2SD23911.70 0.1 Features Low saturation voltage Collector-emitter voltage =60V0.42 0.1 Pc = 2W (on 40X40X0.7mm ceramic board). 0.46 0.1 Complements the 2SB1561.1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Volt

isc Silicon NPN Darlington Power Transistor 2SD2399DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 2A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low fr

isc Silicon NPN Power Transistor 2SD2395DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0 (Max)@ I = 2ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1566Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and driverapplicationsABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Darlington Power Transistor 2SD2390DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = 7AFE CLow-Collector Saturation Voltage-: V = 2.5V(Max.)@I = 7ACE(sat) CComplement to Type 2SB1560Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio, series regulator and general purposeapplications

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2397DESCRIPTIONHigh DC Current Gain: h = 1000(Min) @I = 1AFE CLow Collector Saturation Voltgae-: V = 1.5V(Max.)@ I = 1ACE(sat) CBuilt-in zener diode between collector and baseMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotorRelay driveABS

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2398DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 1AFE CLow Collector Saturation Voltgae-: V = 1.5V(Max.)@ I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotorR

isc Silicon NPN Power Transistor 2SD2394DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0 (Max)@ I = 2ACE(sat) CGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and driverapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a